BC869T/R NXP Semiconductors, BC869T/R Datasheet - Page 6

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BC869T/R

Manufacturer Part Number
BC869T/R
Description
Trans GP BJT PNP 20V 1A 4-Pin(3+Tab) SOT-89 T/R
Manufacturer
NXP Semiconductors
Type
PNPr
Datasheet

Specifications of BC869T/R

Package
4SOT-89
Supplier Package
SOT-89
Pin Count
4
Minimum Dc Current Gain
50@5mA@10V|85@500mA@1V|60@1A@1V
Maximum Operating Frequency
140(Typ) MHz
Maximum Dc Collector Current
1 A
Maximum Collector Emitter Saturation Voltage
0.5@100mA@1A V
Maximum Collector Base Voltage
32 V
Maximum Collector Emitter Voltage
20 V
Maximum Emitter Base Voltage
5 V
NXP Semiconductors
CHARACTERISTICS
T
2004 Nov 08
I
I
h
V
V
C
f
SYMBOL
amb
CBO
EBO
T
FE
CEsat
BE
PNP medium power transistor;
20 V, 1 A
c
= 25 °C unless otherwise specified.
collector-base cut-off current
emitter-base cut-off current
DC current gain
collector-emitter saturation voltage I
base-emitter voltage
collector capacitance
transition frequency
PARAMETER
V
V
V
BC869
BC869−16
BC869−25
V
V
I
f = 1 MHz
V
f = 100 MHz
C
E
CB
CB
EB
CE
CE
CE
V
V
V
V
V
= i
= −1 A; I
CE
CE
CE
CE
CE
= −5 V; I
= −25 V; I
= −25 V; I
= −10 V; I
= −1 V; I
= −5 V; I
e
= 0 A; V
= −10 V; I
= −1 V; I
= −1 V; I
= −1 V; I
= −1 V; I
6
CONDITIONS
B
= −100 mA
C
C
C
E
E
C
CB
= 0 A
= −1 A
= −50 mA;
C
C
C
C
= 0 A
= 0 A
= −5 mA
C
= −500 mA
= −1 A
= −500 mA
= −500 mA
= −10 V;
= −5 mA
50
85
60
100
160
40
MIN.
28
140
TYP.
Product data sheet
−100
−10
−100
375
250
375
−500
−700
−1
MAX.
BC869
nA
μA
nA
mV
mV
V
pF
MHz
UNIT

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