BFT92T/R NXP Semiconductors, BFT92T/R Datasheet - Page 2

• Manufacturer Part Number: BFT92T/R
• Description: Trans GP BJT PNP 15V 0.025A 3-Pin TO-236AB T/R
• Manufacturer: NXP Semiconductors
• Type: PNPr

Specifications of BFT92T/R

• Package: 3TO-236AB
• Supplier Package: TO-236AB
• Pin Count: 3
• Minimum Dc Current Gain: 20@14mA@10V
• Maximum Operating Frequency: 5000(Typ) MHz
• Maximum Dc Collector Current: 0.025 A
• Maximum Collector Base Voltage: 20 V
• Maximum Collector Emitter Voltage: 15 V
• Maximum Emitter Base Voltage: 2 V

NXP Semiconductors
DESCRIPTION
PNP transistor in a plastic SOT23
envelope.
It is primarily intended for use in RF
wideband amplifiers, such as in aerial
amplifiers, radar systems,
oscilloscopes, spectrum analyzers,
etc. The transistor features low
intermodulation distortion and high
power gain; due to its very high
transition frequency, it also has
excellent wideband properties and
low noise up to high frequencies.
NPN complements are BFR92 and
BFR92A.
QUICK REFERENCE DATA
Note
1. T
November 1992
V
V
I
P
f
C
G
F
d
SYMBOL
C
T
im
CBO
CEO
tot
PNP 5 GHz wideband transistor
re
UM
s
is the temperature at the soldering point of the collector tab.
collector-base voltage
collector-emitter voltage
DC collector current
total power dissipation
transition frequency
feedback capacitance
maximum unilateral power gain
noise figure
intermodulation distortion
PARAMETER
PINNING
PIN
1
2
3
base
emitter
collector
open emitter
open base
up to T
I
I
I
f = 500 MHz; T
I
T
I
V
f
C
C
C
C
C
(pq-r)
Code: W1p
amb
o
= 14 mA; V
= 2 mA; V
= 14 mA; V
= 5 mA; V
= 14 mA; V
= 150 mV; T
DESCRIPTION
= 25 C
= 493.25 MHz
2
s
= 95 C; note 1
CONDITIONS
CE
CE
CE
CE
amb
CE
amb
= 10 V; f = 1 MHz
= 10 V; f = 500 MHz;
= 10 V; f = 500 MHz
= 10 V;
= 10 V; R
= 25 C
= 25 C;
lfpage
L
= 75 ;
Top view
1
Fig.1 SOT23.




5
0.7
18
2.5
60
Product specification
TYP.
3
MSB003
20
15
25
300





MAX.
BFT92
2
V
V
mA
mW
GHz
pF
dB
dB
dB
UNIT