BFT92T/R NXP Semiconductors, BFT92T/R Datasheet - Page 4

• Manufacturer Part Number: BFT92T/R
• Description: Trans GP BJT PNP 15V 0.025A 3-Pin TO-236AB T/R
• Manufacturer: NXP Semiconductors
• Type: PNPr

Specifications of BFT92T/R

• Package: 3TO-236AB
• Supplier Package: TO-236AB
• Pin Count: 3
• Minimum Dc Current Gain: 20@14mA@10V
• Maximum Operating Frequency: 5000(Typ) MHz
• Maximum Dc Collector Current: 0.025 A
• Maximum Collector Base Voltage: 20 V
• Maximum Collector Emitter Voltage: 15 V
• Maximum Emitter Base Voltage: 2 V

NXP Semiconductors
CHARACTERISTICS
T
Notes
1. G
2. d
November 1992
I
h
f
C
C
G
C
F
V
SYMBOL
j
CBO
T
FE
= 25 C unless otherwise specified.
o
c
e
re
PNP 5 GHz wideband transistor
UM
V
V
V
measured at f
im
G
p
q
r
UM
= V
= V
= V
UM
= 60 dB (DIN 45004B); I
is the maximum unilateral power gain, assuming S
o
o
o
=
6 dB; f
at d
6 dB; f
collector cut-off current
DC current gain
transition frequency
collector capacitance
emitter capacitance
feedback capacitance
maximum unilateral power gain
(note 1)
noise figure
output voltage
10
im
log
(pq-r)
= 60 dB; f
r
q
--------------------------------------------------------- - dB.

= 505.25 MHz;
1
= 503.25 MHz;
–
PARAMETER
= 493.25 MHz.
S
11
S
p
2
 1
21
= 495.25 MHz;

C
2
–
= 14 mA; V
S
22
2

CE
note 2
I
I
I
f = 500 MHz
I
I
I
I
f = 500 MHz; T
I
f = 500 MHz; T
= 10 V; R
E
C
C
E
C
C
C
C
= 0; V
= i
= 14 mA; V
= 14 mA; V
= i
= 2 mA; V
= 14 mA; V
= 5 mA; V
e
c
= 0; V
= 0; V
CB
4
12
L
= 10 V;
is zero and
CB
EB
CONDITIONS
= 75 ;
CE
CE
CE
CE
CE
amb
amb
= 0.5 V; f = 1 MHz
= 10 V; f = 1 MHz
= 10 V; f = 1 MHz
= 10 V;
= 10 V
= 10 V;
= 10 V;
= 25 C
= 25 C

20







MIN. TYP. MAX.

50
5
0.75 
0.8
0.7
18
2.5
150
Product specification
50







BFT92
nA
GHz
pF
pF
pF
dB
dB
mV
UNIT