BFT92T/R NXP Semiconductors, BFT92T/R Datasheet - Page 5

• Manufacturer Part Number: BFT92T/R
• Description: Trans GP BJT PNP 15V 0.025A 3-Pin TO-236AB T/R
• Manufacturer: NXP Semiconductors
• Type: PNPr

Specifications of BFT92T/R

• Package: 3TO-236AB
• Supplier Package: TO-236AB
• Pin Count: 3
• Minimum Dc Current Gain: 20@14mA@10V
• Maximum Operating Frequency: 5000(Typ) MHz
• Maximum Dc Collector Current: 0.025 A
• Maximum Collector Base Voltage: 20 V
• Maximum Collector Emitter Voltage: 15 V
• Maximum Emitter Base Voltage: 2 V

NXP Semiconductors
November 1992
handbook, halfpage
handbook, halfpage
PNP 5 GHz wideband transistor
L2 = L3 = 5 H Ferroxcube choke, catalogue
number 3122 108 20150.
L1 = 4 turns 0.35 mm copper wire;
winding pitch 1 mm; internal diameter 4 mm.
I
Fig.4
(pF)
E
C c
75 Ω
= i
0.8
0.6
0.4
0.2
e
Fig.2 Intermodulation distortion test circuit.
1
0
= 0; f = 1 MHz; T
0
Collector capacitance as a function of
680 pF
collector-base voltage.
390 Ω
L2
j
= 25 C.
L1
L3
300 Ω
10
3.9 kΩ
680 pF
16 Ω
–V CB (V)
24 V
DUT
680 pF
820
Ω
MEA920
MEA919
20
75 Ω
5
handbook, halfpage
handbook, halfpage
V
Fig.3
Fig.5
V
(GHz)
h
CE
CE
f T
FE
100
= 10 V; T
= 10 V; f = 500 MHz; T
75
50
25
0
6
4
2
0
0
0
DC current gain as a function of collector
current.
Transition frequency as a function of
collector current.
j
= 25 C.
10
10
j
= 25 C.
20
20
Product specification
–I
–I
C
C
(mA)
(mA)
MEA347
MEA344
BFT92
30
30