BLF244,112 NXP Semiconductors, BLF244,112 Datasheet - Page 5

• Manufacturer Part Number: BLF244,112
• Description: TRANSISTOR RF DMOS SOT123A
• Manufacturer: NXP Semiconductors

Specifications of BLF244,112

• Package / Case: SOT-123A
• Transistor Type: N-Channel
• Frequency: 175MHz
• Gain: 17dB
• Voltage - Rated: 65V
• Current Rating: 3A
• Current - Test: 25mA
• Voltage - Test: 28V
• Power - Output: 15W
• Minimum Operating Temperature: - 65 C
• Mounting Style: SMD/SMT
• Resistance Drain-source Rds (on): 1.5 Ohm @ 10 V
• Transistor Polarity: N-Channel
• Configuration: Single Dual Source
• Drain-source Breakdown Voltage: 65 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 3 A
• Power Dissipation: 38000 mW
• Maximum Operating Temperature: + 200 C
• Application: VHF
• Channel Type: N
• Channel Mode: Enhancement
• Drain Source Voltage (max): 65V
• Output Power (max): 15W
• Power Gain (typ)@vds: 17@28V/15@12.5VdB
• Frequency (max): 175MHz
• Package Type: SOT-123A
• Pin Count: 4
• Forward Transconductance (typ): 0.6(Min)S
• Drain Source Resistance (max): 1500@10Vmohm
• Input Capacitance (typ)@vds: 60@28VpF
• Output Capacitance (typ)@vds: 40@28VpF
• Reverse Capacitance (typ): 4.5@28VpF
• Operating Temp Range: -65C to 200C
• Drain Efficiency (typ): 65%
• Mounting: Screw
• Mode Of Operation: CW Class-B
• Number Of Elements: 1
• Power Dissipation (max): 38000mW
• Vswr (max): 50
• Screening Level: Military
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Noise Figure: -
• Lead Free Status / Rohs Status: Lead free / RoHS Compliant
• Other names: 568-2411; 933817040112; BLF244; BLF244

Philips Semiconductors
2003 Oct 13
handbook, halfpage
handbook, halfpage
VHF power MOS transistor
V
Fig.4
V
Fig.6
(mV/K)
R DS(on)
T.C.
DS
GS
( )
= 10 V; valid for T
= 10 V; I
2
0
2
4
6
8
1
2
1
0
Temperature coefficient of gate-source
voltage as a function of drain current, typical
values.
Drain-source on-state resistance as a
function of junction temperature, typical
values.
0
D
= 0.75 A.
j
40
= 25 to 125 C.
10
80
10
2
I D (mA)
120
T j ( C)
MGP152
MGP154
10
160
3
5
handbook, halfpage
handbook, halfpage
V
solid line: T
dotted line: T
Fig.5
V
Fig.7
DS
GS
(pF)
(A)
160
120
I D
C
= 10 V.
= 0; f = 1 MHz.
80
40
6
4
2
0
0
0
0
Drain current as a function of gate-source
voltage, typical values.
Input and output capacitance as functions
of drain-source voltage, typical values.
j
= 25 C.
j
= 125 C.
10
4
20
8
C os
C is
Product specification
12
30
V GS (V)
V DS (V)
BLF244
MGP153
MGP155
16
40