BLF244,112 NXP Semiconductors, BLF244,112 Datasheet - Page 8

• Manufacturer Part Number: BLF244,112
• Description: TRANSISTOR RF DMOS SOT123A
• Manufacturer: NXP Semiconductors

Specifications of BLF244,112

• Package / Case: SOT-123A
• Transistor Type: N-Channel
• Frequency: 175MHz
• Gain: 17dB
• Voltage - Rated: 65V
• Current Rating: 3A
• Current - Test: 25mA
• Voltage - Test: 28V
• Power - Output: 15W
• Minimum Operating Temperature: - 65 C
• Mounting Style: SMD/SMT
• Resistance Drain-source Rds (on): 1.5 Ohm @ 10 V
• Transistor Polarity: N-Channel
• Configuration: Single Dual Source
• Drain-source Breakdown Voltage: 65 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 3 A
• Power Dissipation: 38000 mW
• Maximum Operating Temperature: + 200 C
• Application: VHF
• Channel Type: N
• Channel Mode: Enhancement
• Drain Source Voltage (max): 65V
• Output Power (max): 15W
• Power Gain (typ)@vds: 17@28V/15@12.5VdB
• Frequency (max): 175MHz
• Package Type: SOT-123A
• Pin Count: 4
• Forward Transconductance (typ): 0.6(Min)S
• Drain Source Resistance (max): 1500@10Vmohm
• Input Capacitance (typ)@vds: 60@28VpF
• Output Capacitance (typ)@vds: 40@28VpF
• Reverse Capacitance (typ): 4.5@28VpF
• Operating Temp Range: -65C to 200C
• Drain Efficiency (typ): 65%
• Mounting: Screw
• Mode Of Operation: CW Class-B
• Number Of Elements: 1
• Power Dissipation (max): 38000mW
• Vswr (max): 50
• Screening Level: Military
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Noise Figure: -
• Lead Free Status / Rohs Status: Lead free / RoHS Compliant
• Other names: 568-2411; 933817040112; BLF244; BLF244

Philips Semiconductors
2003 Oct 13
handbook, full pagewidth
VHF power MOS transistor
f = 175 MHz.
50
input
C1
C2
C3
L1
C5
C4
L2
R2
Fig.13 Test circuit for class-B operation.
V G
R1
C6
L3
D.U.T.
8
R3
L4
C14
C7
L5
L7
L6
C8
C9
L8
C13
C11
V D
C10
C12
Product specification
BLF244
MGP161
output
50