BLF244,112 NXP Semiconductors, BLF244,112 Datasheet - Page 7

• Manufacturer Part Number: BLF244,112
• Description: TRANSISTOR RF DMOS SOT123A
• Manufacturer: NXP Semiconductors

Specifications of BLF244,112

• Package / Case: SOT-123A
• Transistor Type: N-Channel
• Frequency: 175MHz
• Gain: 17dB
• Voltage - Rated: 65V
• Current Rating: 3A
• Current - Test: 25mA
• Voltage - Test: 28V
• Power - Output: 15W
• Minimum Operating Temperature: - 65 C
• Mounting Style: SMD/SMT
• Resistance Drain-source Rds (on): 1.5 Ohm @ 10 V
• Transistor Polarity: N-Channel
• Configuration: Single Dual Source
• Drain-source Breakdown Voltage: 65 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 3 A
• Power Dissipation: 38000 mW
• Maximum Operating Temperature: + 200 C
• Application: VHF
• Channel Type: N
• Channel Mode: Enhancement
• Drain Source Voltage (max): 65V
• Output Power (max): 15W
• Power Gain (typ)@vds: 17@28V/15@12.5VdB
• Frequency (max): 175MHz
• Package Type: SOT-123A
• Pin Count: 4
• Forward Transconductance (typ): 0.6(Min)S
• Drain Source Resistance (max): 1500@10Vmohm
• Input Capacitance (typ)@vds: 60@28VpF
• Output Capacitance (typ)@vds: 40@28VpF
• Reverse Capacitance (typ): 4.5@28VpF
• Operating Temp Range: -65C to 200C
• Drain Efficiency (typ): 65%
• Mounting: Screw
• Mode Of Operation: CW Class-B
• Number Of Elements: 1
• Power Dissipation (max): 38000mW
• Vswr (max): 50
• Screening Level: Military
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Noise Figure: -
• Lead Free Status / Rohs Status: Lead free / RoHS Compliant
• Other names: 568-2411; 933817040112; BLF244; BLF244

Philips Semiconductors
2003 Oct 13
handbook, halfpage
handbook, halfpage
VHF power MOS transistor
Class-B operation; V
f = 175 MHz; T
Fig.9
Class-B operation; V
f = 175 MHz; T
Fig.11 Load power as a function of input power;
(W)
(W)
P L
P L
30
20
10
20
10
0
0
0
Load power as a function of input power;
typical values.
typical values.
h
h
= 25 C; R
= 25 C; R
DS
DS
= 28 V; I
= 12.5 V; I
th mb-h
th mb-h
DQ
= 0.3 K/W.
= 0.3 K/W.
1
1
DQ
= 25 mA;
= 25 mA;
P IN (W)
P IN (W)
MGP157
MGP159
2
2
7
handbook, halfpage
handbook, halfpage
Class-B operation; V
f = 175 MHz; T
Fig.10 Power gain and efficiency as functions of
Class-B operation; V
f = 175 MHz; T
Fig.12 Power gain and efficiency as functions of
(dB)
(dB)
G p
G p
20
10
20
16
12
0
8
4
0
0
load power; typical values.
load power; typical values.
h
h
= 25 C; R
= 25 C; R
DS
DS
4
G p
= 28 V; I
= 12.5 V; I
10
D
th mb-h
th mb-h
G p
D
DQ
= 0.3 K/W.
= 0.3 K/W.
8
DQ
= 25 mA;
= 25 mA;
20
Product specification
12
P L (W)
P L (W)
BLF244
MGP158
MGP160
30
16
100
50
0
100
80
60
40
20
(%)
(%)
D
D