BLF578,112 NXP Semiconductors, BLF578,112 Datasheet - Page 2

• Manufacturer Part Number: BLF578,112
• Description: TRANSISTOR PWR LDMOS SOT539A
• Manufacturer: NXP Semiconductors

Specifications of BLF578,112

• Transistor Type: LDMOS
• Frequency: 108MHz
• Gain: 26dB
• Voltage - Rated: 110V
• Current Rating: 88A
• Current - Test: 40mA
• Voltage - Test: 50V
• Power - Output: 1000W
• Package / Case: SOT539A
• Application: HF
• Channel Type: N
• Channel Mode: Enhancement
• Continuous Drain Current: 88A
• Drain Source Voltage (max): 110V
• Output Power (max): 1200W
• Power Gain (typ)@vds: 26@50V/24@50VdB
• Frequency (max): 225MHz
• Package Type: LDMOST
• Pin Count: 5
• Drain Source Resistance (max): 70(Typ)@6Vmohm
• Input Capacitance (typ)@vds: 403@50VpF
• Output Capacitance (typ)@vds: 138@50VpF
• Reverse Capacitance (typ): 3@50VpF
• Operating Temp Range: -65C to 225C
• Drain Efficiency (typ): 71%
• Mounting: Screw
• Mode Of Operation: CW/Pulsed RF
• Number Of Elements: 2
• Vswr (max): 13
• Screening Level: Military
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Noise Figure: -
• Lead Free Status / Rohs Status: Compliant
• Other names: 568-5103-5; 934063155112; BLF578,112

NXP Semiconductors
2. Pinning information
3. Ordering information
4. Limiting values
BLF578_2
Product data sheet
Table 2.
[1]
Table 3.
Table 4.
In accordance with the Absolute Maximum Rating System (IEC 60134).
Pin
1
2
3
4
5
Type number
BLF578
Symbol
V
V
I
T
T
D
stg
j
DS
GS
Connected to flange.
Pinning
Ordering information
Limiting values
Parameter
drain-source voltage
gate-source voltage
drain current
storage temperature
junction temperature
Description
drain1
drain2
gate1
gate2
source
Package
Name
-
Rev. 02 — 4 February 2010
Description
flanged balanced LDMOST ceramic package;
2 mounting holes; 4 leads
Conditions
[1]
Simplified outline
1
3
2
4
Power LDMOS transistor
5
Graphic symbol
Min
-
−0.5
-
−65
-
© NXP B.V. 2010. All rights reserved.
BLF578
3
4
Max
110
+11
88
+150
225
Version
SOT539A
1
2
sym117
2 of 14
5
Unit
V
V
A
°C
°C