BLF578,112 NXP Semiconductors, BLF578,112 Datasheet - Page 4

• Manufacturer Part Number: BLF578,112
• Description: TRANSISTOR PWR LDMOS SOT539A
• Manufacturer: NXP Semiconductors

Specifications of BLF578,112

• Transistor Type: LDMOS
• Frequency: 108MHz
• Gain: 26dB
• Voltage - Rated: 110V
• Current Rating: 88A
• Current - Test: 40mA
• Voltage - Test: 50V
• Power - Output: 1000W
• Package / Case: SOT539A
• Application: HF
• Channel Type: N
• Channel Mode: Enhancement
• Continuous Drain Current: 88A
• Drain Source Voltage (max): 110V
• Output Power (max): 1200W
• Power Gain (typ)@vds: 26@50V/24@50VdB
• Frequency (max): 225MHz
• Package Type: LDMOST
• Pin Count: 5
• Drain Source Resistance (max): 70(Typ)@6Vmohm
• Input Capacitance (typ)@vds: 403@50VpF
• Output Capacitance (typ)@vds: 138@50VpF
• Reverse Capacitance (typ): 3@50VpF
• Operating Temp Range: -65C to 225C
• Drain Efficiency (typ): 71%
• Mounting: Screw
• Mode Of Operation: CW/Pulsed RF
• Number Of Elements: 2
• Vswr (max): 13
• Screening Level: Military
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Noise Figure: -
• Lead Free Status / Rohs Status: Compliant
• Other names: 568-5103-5; 934063155112; BLF578,112

NXP Semiconductors
BLF578_2
Product data sheet
6.1 Ruggedness in class-AB operation
Table 6.
T
Table 7.
Mode of operation: pulsed RF; t
I
The BLF578 is capable of withstanding a load mismatch corresponding to VSWR = 13 : 1
through all phases under the following conditions: V
pulsed; f = 225 MHz.
Symbol Parameter
I
I
R
C
C
C
Symbol Parameter
G
RL
η
Dq
DSX
GSS
j
Fig 2.
D
DS(on)
rs
iss
oss
p
= 25
in
= 40 mA; T
°
C; per section unless otherwise specified.
drain cut-off current
gate leakage current
drain-source on-state
resistance
feedback capacitance
input capacitance
output capacitance
power gain
input return loss
drain efficiency
V
Output capacitance as a function of drain-source voltage; typical values per
section
GS
DC characteristics
RF characteristics
case
= 0 V; f = 1 MHz.
= 25
C
(pF)
oss
°
Rev. 02 — 4 February 2010
C; unless otherwise specified; in a class-AB production test circuit.
900
750
600
450
300
150
0
0
p
…continued
= 100
10
μ
s;
Conditions
V
V
V
V
I
V
f = 1 MHz
V
f = 1 MHz
V
f = 1 MHz
Conditions
P
P
P
δ
D
GS
DS
GS
GS
GS
GS
GS
L
L
L
20
= 20 %; f = 225 MHz; RF performance at V
= 16.66 A
= 1200 W
= 1200 W
= 1200 W
= V
= 10 V
= 11 V; V
= V
= 0 V; V
= 0 V; V
= 0 V; V
GS(th)
GS(th)
30
DS
DS
DS
+ 3.75 V;
DS
+ 3.75 V;
DS
= 50 V;
= 50 V;
= 50 V;
= 0 V
40
= 50 V; I
001aaj113
V
DS
(V)
50
Power LDMOS transistor
Dq
Min
58
-
-
-
-
-
Min
23
14
68
= 40 mA; P
Typ
70
-
0.07
3
403
138
Typ
24
17.5
71
© NXP B.V. 2010. All rights reserved.
BLF578
L
Max
-
280
-
-
-
-
Max
25.4
-
-
= 1200 W
DS
= 50 V;
4 of 14
Unit
A
nA
Ω
pF
pF
pF
Unit
dB
dB
%