MW6S004NT1 Freescale Semiconductor, MW6S004NT1 Datasheet
MW6S004NT1
Specifications of MW6S004NT1
MW6S004NT1TR
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MW6S004NT1 Summary of contents
Page 1
... LATERAL N - CHANNEL RF POWER MOSFET = 50 mA, DQ CASE 466 - 03, STYLE 1 Symbol V DSS stg T J Symbol R θJC 1C (Minimum) Rev. 4, 6/2009 PLD 1.5 PLASTIC Value Unit - 0.5, +68 Vdc - 0.5, +12 Vdc - 65 to +150 °C 150 °C (1,2) Value Unit °C/W 8.8 8.5 Class A (Minimum) IV (Minimum) MW6S004NT1 1 ...
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... MHz, Two - Tone Test, 100 kHz Tone Spacing Power Gain Drain Efficiency Intermodulation Distortion Input Return Loss Parameter measured on Freescale Test Fixture, due to resistive divider network on the board GS(Q) Refer to Test Circuit Schematic. MW6S004NT1 2 Rating 3 = 25°C unless otherwise noted) A Symbol I DSS I DSS I GSS V GS(th) ...
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... Microstrip Z3 0.580″ x 0.420″ Microstrip Z4 0.580″ x 0.100″ Microstrip Z5 0.025″ x 0.680″ Microstrip Z6 0.210″ x 0.100″ Microstrip Table 6. MW6S004NT1 Test Circuit Component Designations and Values Part C1 100 nF Chip Capacitor C2, C3, C6, C7 9.1 pF Chip Capacitors C4 μ Chip Capacitors C8 10 μ ...
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... MW6S004N Rev 3 Figure 2. MW6S004NT1 Test Circuit Component Layout MW6S004NT1 Device Data Freescale Semiconductor ...
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... Vdc 5th Order 7th Order 0 OUTPUT POWER (WATTS) PEP out versus Output Power P6dB = 38.73 dBm (7.465 W) P3dB = 38.22 dBm (6.637 Vdc Pulsed CW, 8 μsec(on), 1 msec(off 1960 MHz INPUT POWER (dBm) in Input Power MW6S004NT1 10 Ideal Actual 26 5 ...
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... Figure 8. Single - Carrier CDMA ACPR, Power Gain 0.01 19 18.5 18 17.5 17 16 OUTPUT POWER (WATTS) CW out Figure 10. Power Gain versus Output Power MW6S004NT1 6 TYPICAL CHARACTERISTICS = 28 Vdc ACPR η OUTPUT POWER (WATTS) AVG. out and Drain Efficiency versus Output Power T = −30_C 25_C 85_C Vdc η ...
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... T , JUNCTION TEMPERATURE (°C) J This above graph displays calculated MTTF in hours when the device = 4 W PEP, and η is operated Vdc out MTTF calculator available at http://www.freescale.com/rf. Select Software & Tools/Development Tools/Calculators to access MTTF calculators by product. 230 250 = 33%. D MW6S004NT1 7 ...
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... Z o Figure 13. Series Equivalent Source and Load Impedance MW6S004NT1 1990 MHz Z load = 10 Ω 1930 MHz f = 1990 MHz Z source f = 1930 MHz Vdc mA PEP DD DQ out source load MHz W W 1930 1.96 - j5.34 8.78 + j6.96 1960 1.89 - j5.10 8.93 + j7.46 1990 1.82 - j4.85 9 ...
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... MW6S004NT1 9 ...
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... MW6S004NT1 ohm system) (continued ∠ φ 1.211 - 25.120 0.006 1.187 - 26.920 0.006 1.166 - 28.650 0.006 1 ...
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... N 0.230 0.240 5.84 6.10 P 0.000 0.008 0.00 0.20 Q 0.055 0.063 1.40 1.60 R 0.200 0.210 5.08 5.33 S 0.006 0.012 0.15 0.31 U 0.006 0.012 0.15 0.31 ZONE V 0.000 0.021 0.00 0.53 ZONE W 0.000 0.010 0.00 0.25 ZONE X 0.000 0.010 0.00 0.25 MW6S004NT1 11 ...
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... Modified data sheet to reflect MSL rating change from result of the standardization of packing process as described in Product and Process Change Notification number, PCN13516 • Added Electromigration MTTF Calculator and RF High Power Model availability to Product Documentation, Tools and Software MW6S004NT1 12 REVISION HISTORY Description ...
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... Freescale Semiconductor was negligent regarding the design or manufacture of the part. Freescalet and the Freescale logo are trademarks of Freescale Semiconductor, Inc. All other product or service names are the property of their respective owners. © Freescale Semiconductor, Inc. 2007, 2009. All rights reserved. MW6S004NT1 13 ...