MW6S004NT1 Freescale Semiconductor, MW6S004NT1 Datasheet - Page 12

• Manufacturer Part Number: MW6S004NT1
• Description: MOSFET RF N-CH 28V 4W PLD-1.5
• Manufacturer: Freescale Semiconductor

Specifications of MW6S004NT1

• Transistor Type: N-Channel
• Frequency: 1.96GHz
• Gain: 18dB
• Voltage - Rated: 68V
• Current Rating: 10µA
• Current - Test: 50mA
• Voltage - Test: 28V
• Power - Output: 4W
• Package / Case: PLD-1.5
• Configuration: Single Dual Source
• Drain-source Breakdown Voltage: 68 V
• Gate-source Breakdown Voltage: - 0.5 V or 12 V
• Maximum Operating Temperature: + 200 C
• Minimum Operating Temperature: - 65 C
• Mounting Style: SMD/SMT
• Transistor Polarity: N-Channel
• Drain Source Voltage Vds: 68V
• Rf Transistor Case: PLD-1.5
• Termination Type: SMD
• Output Power Pout: 4W
• Peak Reflow Compatible (260 C): Yes
• Rohs Compliant: Yes
• Channel Type: N
• Channel Mode: Enhancement
• Drain Source Voltage (max): 68V
• Power Gain (typ)@vds: 19dB
• Frequency (min): 1MHz
• Frequency (max): 2GHz
• Package Type: PLD-1.5
• Pin Count: 3
• Input Capacitance (typ)@vds: 23@28VpF
• Output Capacitance (typ)@vds: 25@28VpF
• Reverse Capacitance (typ): 21@28VpF
• Operating Temp Range: -65C to 150C
• Drain Efficiency (typ): 33%
• Mounting: Surface Mount
• Mode Of Operation: 2-Tone
• Number Of Elements: 1
• Vswr (max): 5
• Screening Level: Military
• Filter Terminals: SMD
• Gate-source Voltage: 12V
• Leaded Process Compatible: Yes
• Operating Frequency Max: 1.96GHz
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Noise Figure: -
• Lead Free Status / Rohs Status: Lead free / RoHS Compliant
• Other names: MW6S004NT1; MW6S004NT1TR

Application Notes
• AN1955: Thermal Measurement Methodology of RF Power Amplifiers
Engineering Bulletins
• EB212: Using Data Sheet Impedances for RF LDMOS Devices
Software
• Electromigration MTTF Calculator
• RF High Power Model
For Software and Tools, do a Part Number search at http://www.freescale.com, and select the “Part Number” link. Go to the
Software & Tools tab on the part’s Product Summary page to download the respective tool.
MW6S004NT1
12
Revision
Refer to the following documents to aid your design process.
The following table summarizes revisions to this document.
2
3
4
June 2009
Feb. 2007
Apr. 2009
Date
• Corrected MSL Rating from 3 to 1 in Table 4, Moisture Sensitivity Level, p. 2
• Updated V
• Updated Part Numbers in Table 6, Component Designations and Values, to RoHS compliant part
• Removed lower voltage tests from Fig. 10, Power Gain versus Output Power, due to fixed tuned fixture
• Replaced Figure 12, MTTF versus Junction Temperature with updated graph. Removed Amps
• Added Product Documentation and Revision History section, p. 12
• Corrected ESD structures to reflect current testing results. Changed HBM from 1A to 1C and CDM from III
• Corrected C
• Updated PCB information to show more specific material details, Fig. 1, Test Circuit Schematic, p. 3
• Updated Part Numbers in Table 6, Component Designations and Values, to latest RoHS compliant part
• Modified data sheet to reflect MSL rating change from 1 to 3 as a result of the standardization of packing
• Added Electromigration MTTF Calculator and RF High Power Model availability to Product Documentation,
Characteristics table to account for test fixture resistor divider network, p. 2
numbers, p. 3
limitations, p. 6
operating characteristics and location of MTTF calculator for device, p. 7
to IV, p. 1
Dynamic Characteristics table, p. 2
numbers, p. 3
process as described in Product and Process Change Notification number, PCN13516, p. 2
Tools and Software, p. 12
PRODUCT DOCUMENTATION, TOOLS AND SOFTWARE
GS(th)
iss
test condition to indicate AC stimulus on the V
and V
GS(Q)
REVISION HISTORY
to reflect tighter HV6 windows and added Fixture Gate Quiescent V
Description
GS
connection versus the V
Freescale Semiconductor
DS
RF Device Data
connection,
2
and listed
GG(Q)
to On