MW6S004NT1 Freescale Semiconductor, MW6S004NT1 Datasheet - Page 2

• Manufacturer Part Number: MW6S004NT1
• Description: MOSFET RF N-CH 28V 4W PLD-1.5
• Manufacturer: Freescale Semiconductor

Specifications of MW6S004NT1

• Transistor Type: N-Channel
• Frequency: 1.96GHz
• Gain: 18dB
• Voltage - Rated: 68V
• Current Rating: 10µA
• Current - Test: 50mA
• Voltage - Test: 28V
• Power - Output: 4W
• Package / Case: PLD-1.5
• Configuration: Single Dual Source
• Drain-source Breakdown Voltage: 68 V
• Gate-source Breakdown Voltage: - 0.5 V or 12 V
• Maximum Operating Temperature: + 200 C
• Minimum Operating Temperature: - 65 C
• Mounting Style: SMD/SMT
• Transistor Polarity: N-Channel
• Drain Source Voltage Vds: 68V
• Rf Transistor Case: PLD-1.5
• Termination Type: SMD
• Output Power Pout: 4W
• Peak Reflow Compatible (260 C): Yes
• Rohs Compliant: Yes
• Channel Type: N
• Channel Mode: Enhancement
• Drain Source Voltage (max): 68V
• Power Gain (typ)@vds: 19dB
• Frequency (min): 1MHz
• Frequency (max): 2GHz
• Package Type: PLD-1.5
• Pin Count: 3
• Input Capacitance (typ)@vds: 23@28VpF
• Output Capacitance (typ)@vds: 25@28VpF
• Reverse Capacitance (typ): 21@28VpF
• Operating Temp Range: -65C to 150C
• Drain Efficiency (typ): 33%
• Mounting: Surface Mount
• Mode Of Operation: 2-Tone
• Number Of Elements: 1
• Vswr (max): 5
• Screening Level: Military
• Filter Terminals: SMD
• Gate-source Voltage: 12V
• Leaded Process Compatible: Yes
• Operating Frequency Max: 1.96GHz
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Noise Figure: -
• Lead Free Status / Rohs Status: Lead free / RoHS Compliant
• Other names: MW6S004NT1; MW6S004NT1TR

MW6S004NT1
2
Table 4. Moisture Sensitivity Level
Table 5. Electrical Characteristics
Off Characteristics
On Characteristics
Dynamic Characteristics
Functional Tests (In Freescale Test Fixture, 50 ohm system) V
f2 = 1960.1 MHz, Two - Tone Test
Typical Performance (In Freescale 900 MHz Demo Board, 50 ohm system) V
f = 900 MHz, Two - Tone Test, 100 kHz Tone Spacing
Per JESD 22 - A113, IPC/JEDEC J - STD - 020
Zero Gate Voltage Drain Leakage Current
Zero Gate Voltage Drain Leakage Current
Gate - Source Leakage Current
Gate Threshold Voltage
Gate Quiescent Voltage
Fixture Gate Quiescent Voltage
Drain - Source On - Voltage
Reverse Transfer Capacitance
Output Capacitance
Input Capacitance
Power Gain
Drain Efficiency
Intermodulation Distortion
Input Return Loss
Power Gain
Drain Efficiency
Intermodulation Distortion
Input Return Loss
1. V
(V
(V
(V
(V
(V
(V
(V
(V
(V
(V
Refer to Test Circuit Schematic.
DS
DS
GS
DS
DS
DD
GS
DS
DS
DS
GG
= 68 Vdc, V
= 28 Vdc, V
= 10 Vdc, I
= 28 Vdc, I
= 28 Vdc ± 30 mV(rms)ac @ 1 MHz, V
= 28 Vdc ± 30 mV(rms)ac @ 1 MHz, V
= 28 Vdc, V
= 5 Vdc, V
= 28 Vdc, I
= 10 Vdc, I
=
11
/
10
x V
DS
D
D
D
D
GS(Q)
GS
GS
GS
= 50 mAdc)
= 50 mAdc)
= 50 mAdc, Measured in Functional Test)
= 50 mAdc)
= 0 Vdc)
= 0 Vdc)
= 0 Vdc)
= 0 Vdc ± 30 mV(rms)ac @ 1 MHz)
. Parameter measured on Freescale Test Fixture, due to resistive divider network on the board.
Test Methodology
Characteristic
(1)
(T
A
= 25°C unless otherwise noted)
GS
GS
= 0 Vdc)
= 0 Vdc)
DD
= 28 Vdc, I
Symbol
DQ
V
Rating
V
V
DD
V
I
I
I
C
DS(on)
C
IMD
IMD
GS(th)
GS(Q)
GG(Q)
C
G
G
IRL
IRL
DSS
DSS
GSS
η
η
= 50 mA, P
3
oss
rss
iss
= 28 Vdc, I
ps
D
ps
D
out
DQ
16.5
Min
Package Peak Temperature
1.2
2.2
—
—
—
—
—
—
—
—
28
—
—
—
—
—
—
= 4 W PEP, f1 = 1960 MHz,
= 50 mA, P
0.27
260
Typ
- 34
- 12
- 39
- 12
2.7
21
25
30
18
33
19
33
—
—
—
out
2
3
= 4 W PEP,
Freescale Semiconductor
Max
0.37
500
- 28
- 10
2.7
4.2
10
10
20
—
—
—
—
—
—
—
—
—
RF Device Data
μAdc
μAdc
nAdc
Unit
Unit
Vdc
Vdc
Vdc
Vdc
dBc
dBc
dB
dB
dB
dB
°C
pF
pF
pF
%
%