BF1100R,215 NXP Semiconductors, BF1100R,215 Datasheet - Page 11

• Manufacturer Part Number: BF1100R,215
• Description: MOSFET N-CH 14V 30MA SOT143R
• Manufacturer: NXP Semiconductors

Specifications of BF1100R,215

• Package / Case: SOT-143R
• Current Rating: 30mA
• Frequency: 800MHz
• Transistor Type: N-Channel Dual Gate
• Noise Figure: 2dB
• Current - Test: 10mA
• Voltage - Test: 9V
• Configuration: Dual
• Transistor Polarity: N-Channel
• Drain-source Breakdown Voltage: 14 V
• Gate-source Breakdown Voltage: 13.2 V
• Continuous Drain Current: 0.03 A
• Power Dissipation: 200 mW
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 65 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Power - Output: -
• Gain: -
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant
• Other names: 934036560215::BF1100R T/R::BF1100R T/R

NXP Semiconductors
handbook, full pagewidth
Dual-gate MOS-FETs
For V
For V
GG
GG
= V
= V
DS
DS
= 9 V, R
= 12 V, R
G
G
= 180 k .
= 250 k
R GEN
50
V I
50
R2
Fig.27 Cross-modulation test set-up.
4.7 nF
C2
Rev. 02 - 13 November 2007
V GG
10 k
R1
R G
V AGC
4.7 nF
C1
DUT
V DS
4.7 nF
L1
C3
450 nH
C4
12 pF
MGC420
R L
50
BF1100; BF1100R
Product specification
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