BF1100R,215 NXP Semiconductors, BF1100R,215 Datasheet - Page 7

• Manufacturer Part Number: BF1100R,215
• Description: MOSFET N-CH 14V 30MA SOT143R
• Manufacturer: NXP Semiconductors

Specifications of BF1100R,215

• Package / Case: SOT-143R
• Current Rating: 30mA
• Frequency: 800MHz
• Transistor Type: N-Channel Dual Gate
• Noise Figure: 2dB
• Current - Test: 10mA
• Voltage - Test: 9V
• Configuration: Dual
• Transistor Polarity: N-Channel
• Drain-source Breakdown Voltage: 14 V
• Gate-source Breakdown Voltage: 13.2 V
• Continuous Drain Current: 0.03 A
• Power Dissipation: 200 mW
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 65 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Power - Output: -
• Gain: -
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant
• Other names: 934036560215::BF1100R T/R::BF1100R T/R

NXP Semiconductors
handbook, halfpage
handbook, halfpage
Dual-gate MOS-FETs
V
V
T
V
R
Fig.11 Drain current as a function of gate 1 current;
Fig.13 Drain current as a function of gate 1 voltage
j
DS
G2-S
DS
G1
(mA)
(mA)
= 25 C.
I D
I D
= 9 to 12 V.
= 9 V; V
= 180 k
16
12
12
= 4 V.
8
4
0
8
4
0
0
0
typical values.
(= V
G2-S
connected to V
GG
= 4 V.
2
); typical values; see Fig.27.
20
4
GG
); T
40
j
= 25 C.
6
60
8
I
G1
V
GG
MLD163
MLD165
( A)
(V)
Rev. 02 - 13 November 2007
80
10
handbook, halfpage
handbook, halfpage
V
R
T
V
R
Fig.14 Drain current as a function of gate 1 voltage;
j
G2-S
Fig.12 Drain current as a function of gate 1 supply
DS
G1
(mA)
G1
(mA)
= 25 C.
I D
I D
connected to V
= 12 V; V
= 250 k (connected to V
20
15
10
12
= 4 V.
8
4
0
5
0
0
0
(= V
voltage (= V
typical values; see Fig.27.
G2-S
GG
= 4 V.
GG
); typical values; see Fig.27.
4
.
4
GG
R
GG
G1
) and drain supply voltage;
BF1100; BF1100R
); T
= 100 k
8
j
= 25 C.
V
GG
8
Product specification
= V
12
V
GG
DS
511 k
180 k
205 k
249 k
301 k
402 k
147 k
(V)
MLD166
(V)
MLD164
7 of 15
12
16