BF1100R,215 NXP Semiconductors, BF1100R,215 Datasheet - Page 3

• Manufacturer Part Number: BF1100R,215
• Description: MOSFET N-CH 14V 30MA SOT143R
• Manufacturer: NXP Semiconductors

Specifications of BF1100R,215

• Package / Case: SOT-143R
• Current Rating: 30mA
• Frequency: 800MHz
• Transistor Type: N-Channel Dual Gate
• Noise Figure: 2dB
• Current - Test: 10mA
• Voltage - Test: 9V
• Configuration: Dual
• Transistor Polarity: N-Channel
• Drain-source Breakdown Voltage: 14 V
• Gate-source Breakdown Voltage: 13.2 V
• Continuous Drain Current: 0.03 A
• Power Dissipation: 200 mW
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 65 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Power - Output: -
• Gain: -
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant
• Other names: 934036560215::BF1100R T/R::BF1100R T/R

NXP Semiconductors
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
Note
1. Device mounted on a printed-circuit board.
V
I
I
I
P
T
T
handbook, halfpage
D
G1
G2
stg
j
DS
tot
(mW)
Dual-gate MOS-FETs
P tot
SYMBOL
250
200
150
100
50
0
0
Fig.3 Power derating curves.
50
BF1100R
drain-source voltage
drain current
gate 1 current
gate 2 current
total power dissipation
storage temperature
operating junction temperature
BF1100
BF1100R
100
BF1100
PARAMETER
150
T
amb
MLD155
( C)
o
200
Rev. 02 - 13 November 2007
see Fig.3
up to T
up to T
CONDITIONS
amb
amb
Fig.4
= 50 C; note 1
= 40 C; note 1
(mS)
Y fs
40
30
20
10
0
50
Forward transfer admittance as a function
of junction temperature; typical values.
0
65
MIN.
BF1100; BF1100R
50
14
30
200
200
+150
+150
10
10
Product specification
MAX.
100
T ( C)
j
MLD156
o
V
mA
mA
mA
mW
mW
3 of 15
C
C
150
UNIT