BLF544,112 NXP Semiconductors, BLF544,112 Datasheet - Page 3

• Manufacturer Part Number: BLF544,112
• Description: TRANSISTOR RF DMOS SOT171A
• Manufacturer: NXP Semiconductors

Specifications of BLF544,112

• Package / Case: SOT-171A
• Transistor Type: N-Channel
• Frequency: 960MHz
• Gain: 7dB
• Voltage - Rated: 65V
• Current Rating: 3.5A
• Voltage - Test: 28V
• Power - Output: 20W
• Minimum Operating Temperature: - 65 C
• Mounting Style: SMD/SMT
• Product Type: RF MOSFET Power
• Resistance Drain-source Rds (on): 1.25 Ohms
• Transistor Polarity: N-Channel
• Configuration: Single Quad Source
• Drain-source Breakdown Voltage: 65 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 3.5 A
• Power Dissipation: 48 W
• Maximum Operating Temperature: + 200 C
• Application: UHF
• Channel Type: N
• Channel Mode: Enhancement
• Drain Source Voltage (max): 65V
• Output Power (max): 20W
• Power Gain (typ)@vds: 14@28VdB
• Frequency (max): 960MHz
• Package Type: CDFM
• Pin Count: 6
• Forward Transconductance (typ): 0.9S
• Drain Source Resistance (max): 1250@10Vmohm
• Input Capacitance (typ)@vds: 32@28VpF
• Output Capacitance (typ)@vds: 24@28VpF
• Reverse Capacitance (typ): 6.4@28VpF
• Operating Temp Range: -65C to 200C
• Drain Efficiency (typ): 60%
• Mounting: Screw
• Mode Of Operation: CW Class-B
• Number Of Elements: 1
• Power Dissipation (max): 48000mW
• Vswr (max): 50
• Screening Level: Military
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Noise Figure: -
• Current - Test: -
• Lead Free Status / Rohs Status: Compliant
• Other names: 568-2406; 933997320112; BLF544; BLF544

Philips Semiconductors
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 60134).
THERMAL CHARACTERISTICS
2003 Sep 18
handbook, halfpage
V
V
I
P
T
T
R
R
D
SYMBOL
stg
j
SYMBOL
DS
GS
tot
th j-mb
th mb-h
UHF power MOS transistor
(1) Current is this area may be limited by R
(2) T
10
(A)
I D
10
mb
1
1
1
= 25 C.
thermal resistance from junction to mounting base
thermal resistance from mounting base to heatsink
drain-source voltage
gate-source voltage
drain current (DC)
total power dissipation
storage temperature
junction temperature
(1)
Fig.2 DC SOAR.
10
PARAMETER
(2)
DSon.
V DS (V)
MRA992
PARAMETER
10
2
3
T
mb
handbook, halfpage
(1) Short-time operation during mismatch.
(2) Continuous operation.
25 C
P tot
(W)
60
40
20
CONDITIONS
0
0
Fig.3 Power derating curves.
40
80
(1)
(2)
MIN.
65
VALUE
3.7
0.4
Product specification
120
65
3.5
48
+150
200
T h ( C)
MAX.
20
BLF544
MBK442
160
UNIT
K/W
K/W
V
V
A
W
C
C
UNIT