BLF544,112 NXP Semiconductors, BLF544,112 Datasheet - Page 5

• Manufacturer Part Number: BLF544,112
• Description: TRANSISTOR RF DMOS SOT171A
• Manufacturer: NXP Semiconductors

Specifications of BLF544,112

• Package / Case: SOT-171A
• Transistor Type: N-Channel
• Frequency: 960MHz
• Gain: 7dB
• Voltage - Rated: 65V
• Current Rating: 3.5A
• Voltage - Test: 28V
• Power - Output: 20W
• Minimum Operating Temperature: - 65 C
• Mounting Style: SMD/SMT
• Product Type: RF MOSFET Power
• Resistance Drain-source Rds (on): 1.25 Ohms
• Transistor Polarity: N-Channel
• Configuration: Single Quad Source
• Drain-source Breakdown Voltage: 65 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 3.5 A
• Power Dissipation: 48 W
• Maximum Operating Temperature: + 200 C
• Application: UHF
• Channel Type: N
• Channel Mode: Enhancement
• Drain Source Voltage (max): 65V
• Output Power (max): 20W
• Power Gain (typ)@vds: 14@28VdB
• Frequency (max): 960MHz
• Package Type: CDFM
• Pin Count: 6
• Forward Transconductance (typ): 0.9S
• Drain Source Resistance (max): 1250@10Vmohm
• Input Capacitance (typ)@vds: 32@28VpF
• Output Capacitance (typ)@vds: 24@28VpF
• Reverse Capacitance (typ): 6.4@28VpF
• Operating Temp Range: -65C to 200C
• Drain Efficiency (typ): 60%
• Mounting: Screw
• Mode Of Operation: CW Class-B
• Number Of Elements: 1
• Power Dissipation (max): 48000mW
• Vswr (max): 50
• Screening Level: Military
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Noise Figure: -
• Current - Test: -
• Lead Free Status / Rohs Status: Compliant
• Other names: 568-2406; 933997320112; BLF544; BLF544

Philips Semiconductors
2003 Sep 18
handbook, halfpage
handbook, halfpage
UHF power MOS transistor
R DSon
V
Fig.4
I
Fig.6
(mV/K)
D
DS
( )
T.C
= 1.2 A; V
1.6
1.2
0.8
0.4
= 10 V.
2
0
4
2
0
2
4
10
0
Temperature coefficient of gate-source
voltage as a function of drain current; typical
values.
Drain-source on-state resistance as a
function of junction temperature; typical
values.
2
GS
= 10 V.
10
50
1
100
1
T j ( C)
I D (A)
MDA506
MDA504
150
10
5
handbook, halfpage
handbook, halfpage
V
Fig.5
V
Fig.7
DS
GS
(pF)
100
(A)
I D
C
= 10 V; T
= 0; f = 1 MHz.
80
60
40
20
6
4
2
0
0
0
0
Drain current as a function of gate-source
voltage; typical values.
Input and output capacitance as functions
of drain-source voltage; typical values.
j
= 25 C.
5
10
10
20
Product specification
15
V DS (V)
V GS (V)
BLF544
MDA505
MDA507
C os
C is
30
20