BLF544,112 NXP Semiconductors, BLF544,112 Datasheet - Page 8

• Manufacturer Part Number: BLF544,112
• Description: TRANSISTOR RF DMOS SOT171A
• Manufacturer: NXP Semiconductors

Specifications of BLF544,112

• Package / Case: SOT-171A
• Transistor Type: N-Channel
• Frequency: 960MHz
• Gain: 7dB
• Voltage - Rated: 65V
• Current Rating: 3.5A
• Voltage - Test: 28V
• Power - Output: 20W
• Minimum Operating Temperature: - 65 C
• Mounting Style: SMD/SMT
• Product Type: RF MOSFET Power
• Resistance Drain-source Rds (on): 1.25 Ohms
• Transistor Polarity: N-Channel
• Configuration: Single Quad Source
• Drain-source Breakdown Voltage: 65 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 3.5 A
• Power Dissipation: 48 W
• Maximum Operating Temperature: + 200 C
• Application: UHF
• Channel Type: N
• Channel Mode: Enhancement
• Drain Source Voltage (max): 65V
• Output Power (max): 20W
• Power Gain (typ)@vds: 14@28VdB
• Frequency (max): 960MHz
• Package Type: CDFM
• Pin Count: 6
• Forward Transconductance (typ): 0.9S
• Drain Source Resistance (max): 1250@10Vmohm
• Input Capacitance (typ)@vds: 32@28VpF
• Output Capacitance (typ)@vds: 24@28VpF
• Reverse Capacitance (typ): 6.4@28VpF
• Operating Temp Range: -65C to 200C
• Drain Efficiency (typ): 60%
• Mounting: Screw
• Mode Of Operation: CW Class-B
• Number Of Elements: 1
• Power Dissipation (max): 48000mW
• Vswr (max): 50
• Screening Level: Military
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Noise Figure: -
• Current - Test: -
• Lead Free Status / Rohs Status: Compliant
• Other names: 568-2406; 933997320112; BLF544; BLF544

Philips Semiconductors
List of components (see Figs 11 and 12).
Notes
1. American Technical Ceramics (ATC) capacitor, type 100B or other capacitor of the same quality.
2. American Technical Ceramics (ATC) capacitor, type 100A or other capacitor of the same quality.
3. The striplines are on a double copper-clad printed circuit board, with glass microfibre reinforced PTFE (
2003 Sep 18
C1, C6, C11, C17 multilayer ceramic chip capacitor;
C2
C3, C5
C4
C7
C8, C9
C10, C12
C13
C14
C15, C16
L1
L2
L3
L4, L5
L6
L7
L8
L9
R1, R2
R3
R4
R5
UHF power MOS transistor
COMPONENT
thickness
1
32
inch.
note 1
multilayer ceramic chip capacitor;
note 2
film dielectric trimmer
multilayer ceramic chip capacitor;
note 2
multilayer ceramic chip capacitor
multilayer ceramic chip capacitor;
note 2
multilayer ceramic chip capacitor
electrolytic capacitor
multilayer ceramic chip capacitor;
note 1
film dielectric trimmer
stripline note 3
stripline note 3
stripline note 3
stripline note 3
4 turns enamelled 0.8 mm copper
wire
grade 3B Ferroxcube RF choke
stripline note 3
stripline note 3
0.4 W metal film resistor
10 turns cermet potentiometer
0.4 W metal film resistor
1 W metal film resistor
DESCRIPTION
390 pF; 500 V
16 pF; 50 V
2 to 9 pF
27 pF; 50 V
2
parallel; 50 V
39 pF
100 nF; 50 V
4.7 F; 63 V
20 pF; 500 V
2 to 18 pF
50
50
50
42
31 nH
50
50
1 k
50 k
140 k
10
8
100 nF in
VALUE
9.5
34.5
17.5
3
length 7.5 mm
int. dia. 3 mm
leads 2
22
39.5
DIMENSIONS
3 mm
2.5 mm
2.5 mm
2.5 mm
2.5 mm
2.5 mm
5 mm
Product specification
CATALOGUE NO.
2222 809 09002
2222 852 47104
2222 852 47104
2222 030 38478
2222 809 09003
4312 020 36642
2322 151 11002
2322 151 11404
2322 153 51009
BLF544
r
= 2.2);