BLF6G24-12,112 NXP Semiconductors, BLF6G24-12,112 Datasheet - Page 35
BLF6G24-12,112
Manufacturer Part Number
BLF6G24-12,112
Description
TRANSISTOR PWR LDMOS SOT975
Manufacturer
NXP Semiconductors
Datasheet
1.BLF6G24-12112.pdf
(110 pages)
Specifications of BLF6G24-12,112
Transistor Type
LDMOS
Frequency
2GHz ~ 2.2GHz
Gain
17dB
Power - Output
40W
Package / Case
SOT975B
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Current Rating
-
Noise Figure
-
Current - Test
-
Voltage - Test
-
Lead Free Status / RoHS Status
Lead free / RoHS Compliant, Lead free / RoHS Compliant
Other names
934063603112
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
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1.6.6 RF Plasma Lighting
Application diagram
Recommended products
* = check status at 3.1 new products, as this type has not been released yet for mass production.
Function
Function
MPA (medium
Product highlight:
NXP's 50 V high voltage LDMOS process enables highest power
at unprecedented ruggedness levels necessary for this kind of
application.
BLF578: 1000 W CW operation - highest power LDMOS
amplifier)
power
driver
final
final
final
final
final
final
oscillator
Type
BLF571
BLF573S
BLF574
BLF578
BLF645
BLF 278
BLF 177
Product
MMIC
CONTROLLER
MPA
108 - 225
0 - 1000
0 - 1000
0 - 1000
0 - 1000
0 - 1000
0 - 1300
0 - 1300
28 - 108
SiGe:C MMIC
(MHz)
f
range
MMIC
HPA
1200
1000
300
400
100
100
250
150
20
P
W
L
Package
SOT89
SOT908
SOT89
SOT908
SOT89
SOT908
RF (plasma) bulb
26.5
27.5
27.2
G
dB
24
24
18
17
16
19
p
brb436
Mode of operation
1-TONE; 2-TONE; CW
1-TONE; 2-TONE; CW
1-TONE; 2-TONE; CW
1-TONE; PULSED RF
1-TONE; CW
2-TONE
CW
class AB
class B
Type
BGA6289
BGA6489
BGA6589
BGA7124
BGA7024
BGA7127
BGA7027
BGA7130*
BGA7133*
Features
`
`
`
`
`
Highest power device
Unprecedented ruggedness
Low-thermal resistance design for very reliable operation
Very consistent device performance
Broadband device for flexible use
NXP Semiconductors RF Manual 14
th
edition
37
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