BLF6G24-12,112 NXP Semiconductors, BLF6G24-12,112 Datasheet - Page 55
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BLF6G24-12,112
Manufacturer Part Number
BLF6G24-12,112
Description
TRANSISTOR PWR LDMOS SOT975
Manufacturer
NXP Semiconductors
Datasheet
1.BLF6G24-12112.pdf
(110 pages)
Specifications of BLF6G24-12,112
Transistor Type
LDMOS
Frequency
2GHz ~ 2.2GHz
Gain
17dB
Power - Output
40W
Package / Case
SOT975B
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Current Rating
-
Noise Figure
-
Current - Test
-
Voltage - Test
-
Lead Free Status / RoHS Status
Lead free / RoHS Compliant, Lead free / RoHS Compliant
Other names
934063603112
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
2.11
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NXP's innovative high performance SiGe:C QUBiC4 process allows customers to incorporate
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speeds the migration from GaAs components to silicon by enabling cutting-edge products with
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spurious performance and output power. NXP’s QUBiC is a mature process in mass production
since 2002 with continuous performance upgrades since then. The QUBiC4 process is automotive
qualified and dual sourced in two high volume NXP-owned 8 inch waferfabs providing flexible, low
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QUBiC4 in 3 variants, each having it’s benefits for specific
application areas:
QUBiC4+
The QUBiC4+ BiCMOS process features 0.25 μm CMOS with
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high-frequency mixed-signal designs including thick top metal
layers for high quality inductors. The device set; includinges a
37 GHz FT NPNs with 3.8 V breakdown voltage (BVce0) and
low noise figure (NF < 1.1 @ 2 GHz), 7 GHz fT VPNPs, a 28 GHz
high voltage NPN with 5.9 V breakdown voltage, differential
and single ended varicaps with Q-factor>30, scalable
inductors with Q-factor>20, 800 MHz FT lateral PNP’s,
0.25 μm CMOS, 137, 220 & 12 to 2000 ohm/sq. poly and
active resistors, a 270 ohm/sq. SiCr thin film resistor, a
5.7 fF/μm2 oxide capacitor and an 5 fF/μm2 MIM capacitor,
1 to 6 fF/μm2 oxide capacitors and various other devices
including L-PNPs, isolated NMOS, 3.3 V CMOS and RF-CMOS
transistorscapacitor. The QUBiC4+ process is: silicon based
and , ideal for applications up to 5 GHz (Ft = 37 GHz ,
NF < 1.1 dB @ 1.2 GHz) and e.g. for medium power amplifiers
up to 33 dBm.
QUBiC4X
The QUBiC4X BiCMOS process is a SiGe:C based extension
of the QUBiC process for high-frequency mixed signal designs
and offers on top of features the a rich set of devices for QUBiC
high-frequency mixed-signal designs; including also a 140 GHz
FT NPN with 2.5 V breakdown voltage and very low noise figure
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5.7 fF/μm2 oxide capacitor and a 5 fF/μm2 MIM capacitor.
The QUBiC4X: first SiGe:C process is, ideal for applications
typically up to 30 GHz (Ft = 137 GHz , NF < 0.8dB @ 10 GHz)
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QUBiC4Xi
The QUBiC4Xi BiCMOS process further enhances the QUBiC4X
process and offers additionally a features a set of devices for
high-frequency mixed-signal designs; including 180 GHz FT
NPNs with 1.4 V breakdown voltage and ultra-low noise figure
(NF < 0.7 @ 10 Ghz), 0.25 μm CMOS, several resistors,
a 5.7 fF/μm2 oxide capacitor and a 5 fF/μm2 MI capacitor.
QUBiC4Xi is the: newest SiGe:C process improved on Ft
(> 200 GHz) and even lower noise figure (NF < 0.5 7 dB @
10 GHz) and is, ideal for applications beyond 30 GHz, e.g.
LO generators.
NXP Semiconductors RF Manual 14
th
edition
57