BLF6G10-135RN,112 NXP Semiconductors, BLF6G10-135RN,112 Datasheet
BLF6G10-135RN,112
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BLF6G10-135RN,112 Summary of contents
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... BLF6G10-135RN; BLF6G10LS-135RN Power LDMOS transistor Rev. 02 — 21 January 2010 1. Product profile 1.1 General description 135 W LDMOS power transistor for base station applications at frequencies from 700 MHz to 1000 MHz. Table 1. Typical RF performance at T Mode of operation 2-carrier W-CDMA [1] Test signal: 3GPP; test model 1; 64 DPCH; PAR = 7 0.01 % probability on CCDF per carrier; carrier spacing 5 MHz ...
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... NXP Semiconductors 1.3 Applications RF power amplifiers for GSM, GSM EDGE, W-CDMA and CDMA base stations and multi carrier applications in the 700 MHz to 1000 MHz frequency range 2. Pinning information Table 2. Pin BLF6G10-135RN (SOT502A BLF6G10LS-135RN (SOT502B [1] Connected to flange. 3. Ordering information Table 3. Type number ...
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... Symbol P L(AV η D ACPR 7.1 Ruggedness in class-AB operation The BLF6G10-135RN and BLF6G10LS-135RN are capable of withstanding a load mismatch corresponding to VSWR = through all phases under the following conditions: V BLF6G10-135RN_10LS-135RN_2 Product data sheet Thermal characteristics Conditions thermal resistance from T case junction to case Characteristics C unless otherwise specified ...
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... One-tone CW power gain and drain efficiency as function of load power; typical values 001aah865 60 η IMD D (%) (dBc 100 P (W) L(PEP) = 881 MHz (±100 kHz). 1 Fig 3. Rev. 02 — 21 January 2010 BLF6G10(LS)-135RN Power LDMOS transistor 001aah864 75 η D (%) 120 160 P (W) L −20 −30 −40 −50 − ...
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... P (W) L(AV) = 881 MHz 886 MHz Fig C12 Rev. 02 — 21 January 2010 BLF6G10(LS)-135RN Power LDMOS transistor −20 ACPR (dBc) −30 −40 − 950 mA 881 MHz carrier spacing 5 MHz. 2-carrier W-CDMA adjacent power channel ratio as a function of average load power; typical values ...
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... 800 -1000 MHz V1.0 Value 100 nF 4.7 μ 3.0 pF 220 μ 9.1 Ω; 0.1 W Rev. 02 — 21 January 2010 BLF6G10(LS)-135RN Power LDMOS transistor C18 C10 C11 C6 C7 C19 C14 C15 C12 C13 OUT 800 -1000 MHz V1.0 = 3.5 and thickness = 0.76 mm. ...
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... REFERENCES JEDEC JEITA Rev. 02 — 21 January 2010 BLF6G10(LS)-135RN Power LDMOS transistor 3.38 1.70 34.16 9.91 27.94 0.25 3 ...
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... REFERENCES JEDEC JEITA Rev. 02 — 21 January 2010 BLF6G10(LS)-135RN Power LDMOS transistor 1.70 20.70 9.91 0.25 1.45 20.45 9.65 0.067 0.815 0.390 0.010 0.057 ...
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... LDMOS LDMOST PAR PDPCH RF SMD VSWR W-CDMA 11. Revision history Table 10. Revision history Document ID BLF6G10-135RN_10LS-135RN_2 20100121 Modifications BLF6G10-135RN_10LS-135RN_1 20090210 BLF6G10-135RN_10LS-135RN_2 Product data sheet Abbreviations Description Third Generation Partnership Project Complementary Cumulative Distribution Function Code Division Multiple Access Continuous Wave Dedicated Physical CHannel ...
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... Trademarks Notice: All referenced brands, product names, service names and trademarks are the property of their respective owners. http://www.nxp.com salesaddresses@nxp.com Rev. 02 — 21 January 2010 BLF6G10(LS)-135RN Power LDMOS transistor © NXP B.V. 2010. All rights reserved ...
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... Please be aware that important notices concerning this document and the product(s) described herein, have been included in section ‘Legal information’. © NXP B.V. 2010. For more information, please visit: http://www.nxp.com For sales office addresses, please send an email to: salesaddresses@nxp.com Document identifier: BLF6G10-135RN_10LS-135RN_2 All rights reserved. Date of release: 21 January 2010 ...