BLF6G10-200RN,112 NXP Semiconductors, BLF6G10-200RN,112 Datasheet
BLF6G10-200RN,112
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BLF6G10-200RN,112 Summary of contents
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... BLF6G10-200RN; BLF6G10LS-200RN Power LDMOS transistor Rev. 02 — 21 January 2010 1. Product profile 1.1 General description 200 W LDMOS power transistor for base station applications at frequencies from 700 MHz to 1000 MHz. Table 1. Typical RF performance at T Mode of operation 2-carrier W-CDMA [1] Test signal: 3GPP; test model 1; 64 DPCH; PAR = 7 0.01 % probability on CCDF per carrier; ...
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... MHz to 1000 MHz frequency range. 2. Pinning information Table 2. Pin BLF6G10-200RN (SOT502A BLF6G10LS-200RN (SOT502B [1] Connected to flange. 3. Ordering information Table 3. Type number BLF6G10-200RN BLF6G10LS-200RN - 4. Limiting values Table 4. In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol stg T j BLF6G10-200RN_10LS-200RN_2 Product data sheet Pinning ...
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... L(AV IRL η D ACPR 7.1 Ruggedness in class-AB operation The BLF6G10-200RN and BLF6G10LS-200RN are enhanced rugged devices and are capable of withstanding a load mismatch corresponding to VSWR = through all phases under the following conditions 894 MHz. BLF6G10-200RN_10LS-200RN_2 Product data sheet Thermal characteristics Parameter Conditions ...
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... DS Dq One-tone CW power gain and drain efficiency as function of load power; typical values 001aaj416 60 IMD η (dBc) D (%) 240 360 P (W) L(PEP) Fig 3. Rev. 02 — 21 January 2010 BLF6G10(LS)-200RN Power LDMOS transistor 001aaj415 60 η D (%) 120 160 200 P (W) L −20 −30 −40 −50 −60 ...
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... D (%) (W) L(AV) Fig Rev. 02 — 21 January 2010 BLF6G10(LS)-200RN Power LDMOS transistor −35 IMD3, ACPR (dBc) −40 IMD3 −45 ACPR −50 − 1400 mA 881 MHz (±5 MHz carrier spacing 10 MHz. 2-carrier W-CDMA adjacent channel power ratio and third order intermodulation distortion as function of average load power ...
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... R2 C2 NXP IN 800 -1000 MHz V1.0 Value 220 nF 4.7 μ 1.5 pF 220 μ 9.1 Ω; 0.1 W Rev. 02 — 21 January 2010 BLF6G10(LS)-200RN Power LDMOS transistor C7 C8 C11 C13 L1 C17 C5 C6 C18 C12 C14 C9 C10 NXP OUT 800 -1000 MHz V1.0 = 3.5 and thickness = 0.76 mm. ...
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... REFERENCES JEDEC JEITA Rev. 02 — 21 January 2010 BLF6G10(LS)-200RN Power LDMOS transistor 3.38 1.70 34.16 9.91 27.94 0.25 3 ...
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... REFERENCES JEDEC JEITA Rev. 02 — 21 January 2010 BLF6G10(LS)-200RN Power LDMOS transistor 1.70 20.70 9.91 0.25 1.45 20.45 9.65 0.067 0.815 0.390 0.010 0.057 ...
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... LDMOS LDMOST PAR PDPCH RF SMD VSWR W-CDMA 11. Revision history Table 10. Revision history Document ID BLF6G10-200RN_10LS-200RN_2 20100121 Modifications BLF6G10-200RN_10LS-200RN_1 20090119 BLF6G10-200RN_10LS-200RN_2 Product data sheet Abbreviations Description Third Generation Partnership Project Complementary Cumulative Distribution Function Code Division Multiple Access Continuous Wave Dedicated Physical CHannel ...
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... Trademarks Notice: All referenced brands, product names, service names and trademarks are the property of their respective owners. http://www.nxp.com salesaddresses@nxp.com Rev. 02 — 21 January 2010 BLF6G10(LS)-200RN Power LDMOS transistor © NXP B.V. 2010. All rights reserved ...
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... Please be aware that important notices concerning this document and the product(s) described herein, have been included in section ‘Legal information’. © NXP B.V. 2010. For more information, please visit: http://www.nxp.com For sales office addresses, please send an email to: salesaddresses@nxp.com Document identifier: BLF6G10-200RN_10LS-200RN_2 All rights reserved. Date of release: 21 January 2010 ...