BLF6G10-200RN NXP Semiconductors, BLF6G10-200RN Datasheet
BLF6G10-200RN
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BLF6G10-200RN Summary of contents
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... BLF6G10-200RN; BLF6G10LS-200RN Power LDMOS transistor Rev. 02 — 21 January 2010 1. Product profile 1.1 General description 200 W LDMOS power transistor for base station applications at frequencies from 700 MHz to 1000 MHz. Table 1. Typical RF performance at T Mode of operation 2-carrier W-CDMA [1] Test signal: 3GPP; test model 1; 64 DPCH; PAR = 7 0.01 % probability on CCDF per carrier; ...
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... NXP Semiconductors 1.3 Applications RF power amplifiers for GSM, GSM EDGE, W-CDMA and CDMA base stations and multicarrier applications in the 700 MHz to 1000 MHz frequency range. 2. Pinning information Table 2. Pin BLF6G10-200RN (SOT502A BLF6G10LS-200RN (SOT502B [1] Connected to flange. 3. Ordering information Table 3. Type number ...
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... G p IRL η D ACPR 7.1 Ruggedness in class-AB operation The BLF6G10-200RN and BLF6G10LS-200RN are enhanced rugged devices and are capable of withstanding a load mismatch corresponding to VSWR = through all phases under the following conditions 894 MHz. BLF6G10-200RN_10LS-200RN_2 Product data sheet Thermal characteristics Parameter ...
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... 120 1400 mA 881 MHz (±100 kHz Fig 2. Two-tone CW power gain and drain efficiency as function of peak envelope load power; typical values BLF6G10-200RN_10LS-200RN_2 Product data sheet (dB) 19 η 1400 mA 881 MHz. ...
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... MHz. Fig 4. 2-carrier W-CDMA power gain and drain efficiency as function of average load power; typical values 8. Test information input 50 Ω The drawing is not to scale. Fig 6. Test circuit for operation at 800 MHz BLF6G10-200RN_10LS-200RN_2 Product data sheet 001aaj417 40 η D (%) ...
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... C17, C18 electrolytic capacitor L1 ferrite SMD bead Q1 BLF6G10LS-200RN R1, R2, R3 SMD resistor [1] American Technical Ceramics type 100B or capacitor of same quality. [2] TDK or capacitor of same quality. BLF6G10-200RN_10LS-200RN_2 Product data sheet NXP IN 800 -1000 MHz V1.0 Value 220 nF 4.7 μ ...
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... DIMENSIONS (millimetre dimensions are derived from the original inch dimensions) c UNIT 12.83 4.72 0.15 20.02 mm 12.57 3.43 0.08 19.61 0.505 0.186 0.006 0.788 inches 0.135 0.495 0.772 0.003 OUTLINE VERSION IEC SOT502A Fig 8. Package outline SOT502A BLF6G10-200RN_10LS-200RN_2 Product data sheet scale 19.96 9.50 9.53 1.14 19.94 5.33 19 ...
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... DIMENSIONS (millimetre dimensions are derived from the original inch dimensions) c UNIT 12.83 4.72 0.15 20.02 mm 12.57 3.43 0.08 19.61 0.186 0.505 0.788 0.006 inches 0.135 0.495 0.772 0.003 OUTLINE VERSION IEC SOT502B Fig 9. Package outline SOT502B BLF6G10-200RN_10LS-200RN_2 Product data sheet scale 19.96 9.50 9.53 1.14 19.94 5 ...
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... LDMOS LDMOST PAR PDPCH RF SMD VSWR W-CDMA 11. Revision history Table 10. Revision history Document ID BLF6G10-200RN_10LS-200RN_2 20100121 Modifications BLF6G10-200RN_10LS-200RN_1 20090119 BLF6G10-200RN_10LS-200RN_2 Product data sheet Abbreviations Description Third Generation Partnership Project Complementary Cumulative Distribution Function Code Division Multiple Access Continuous Wave Dedicated Physical CHannel ...
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... NXP Semiconductors product can reasonably be expected to result in personal injury, death or severe property or environmental 13. Contact information For more information, please visit: For sales office addresses, please send an email to: BLF6G10-200RN_10LS-200RN_2 Product data sheet [3] Definition This document contains data from the objective specification for product development. ...
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... Please be aware that important notices concerning this document and the product(s) described herein, have been included in section ‘Legal information’. © NXP B.V. 2010. For more information, please visit: http://www.nxp.com For sales office addresses, please send an email to: salesaddresses@nxp.com Document identifier: BLF6G10-200RN_10LS-200RN_2 All rights reserved. Date of release: 21 January 2010 ...