BLF6G10LS-160,112 NXP Semiconductors, BLF6G10LS-160,112 Datasheet - Page 100
BLF6G10LS-160,112
Manufacturer Part Number
BLF6G10LS-160,112
Description
IC BASESTATION FINAL SOT502B
Manufacturer
NXP Semiconductors
Datasheet
1.BLF6G20LS-140118.pdf
(100 pages)
Specifications of BLF6G10LS-160,112
Package / Case
SOT502B
Transistor Type
LDMOS
Frequency
1GHz
Gain
28dB
Minimum Operating Temperature
- 55 C
Mounting Style
Screw
Product Type
MOSFET Power
Transistor Polarity
N-Channel
Configuration
Single
Continuous Drain Current
44 A
Power Dissipation
115 W
Maximum Operating Temperature
+ 175 C
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Current Rating
-
Power - Output
-
Noise Figure
-
Current - Test
-
Voltage - Test
-
Lead Free Status / RoHS Status
Lead free / RoHS Compliant, Lead free / RoHS Compliant
Other names
934060894112
BLF6G10LS-160
BLF6G10LS-160
BLF6G10LS-160
BLF6G10LS-160
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© 2007 NXP N.V.
All rights reserved. Reproduction in whole or in part is prohibited without the prior written
consent of the copyright owner. The information presented in this document does not form
part of any quotation or contract, is believed to be accurate and reliable and may be changed
without notice. No liability will be accepted by the publisher for any consequence of its use.
Publication thereof does not convey nor imply any license under patent or other industrial or
intellectual property rights.
Date of release: January 007
Document order number: 997 750 1504
Printed in the USA
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