BLF6G20-180RN,112 NXP Semiconductors, BLF6G20-180RN,112 Datasheet - Page 10

• Manufacturer Part Number: BLF6G20-180RN,112
• Description: TRANSISTOR PWR LDMOS SOT502A
• Manufacturer: NXP Semiconductors

Specifications of BLF6G20-180RN,112

• Transistor Type: LDMOS
• Frequency: 1.93GHz ~ 1.99GHz
• Gain: 17.2dB
• Voltage - Rated: 65V
• Current Rating: 49A
• Current - Test: 1.4A
• Voltage - Test: 30V
• Power - Output: 40W
• Package / Case: SOT502A
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Noise Figure: -
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant
• Other names: 934062731112

NXP Semiconductors
10. Abbreviations
11. Revision history
Table 10.
BLF6G20-180RN_20LS-180RN_1
Product data sheet
Document ID
BLF6G20-180RN_20LS-180RN_1
Revision history
Table 9.
Acronym
3GPP
CCDF
CDMA
CW
DPCH
EDGE
GSM
LDMOS
LDMOST
PAR
PDPCH
RF
VSWR
W-CDMA
Abbreviations
Description
Third Generation Partnership Project
Complementary Cumulative Distribution Function
Code Division Multiple Access
Continuous Wave
Dedicated Physical CHannel
Enhanced Data rates for GSM Evolution
Global System for Mobile communications
Laterally Diffused Metal Oxide Semiconductor
Laterally Diffused Metal-Oxide Semiconductor Transistor
Peak-to-Average power Ratio
transmission Power of the Dedicated Physical CHannel
Radio Frequency
Voltage Standing Wave Ratio
Wideband Code Division Multiple Access
Release date
20081117
Rev. 01 — 17 November 2008
Data sheet status
Product data sheet
BLF6G20(LS)-180RN
Change notice
-
Power LDMOS transistor
© NXP B.V. 2008. All rights reserved.
Supersedes
-
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