BLF6G20-180RN,112 NXP Semiconductors, BLF6G20-180RN,112 Datasheet - Page 3

• Manufacturer Part Number: BLF6G20-180RN,112
• Description: TRANSISTOR PWR LDMOS SOT502A
• Manufacturer: NXP Semiconductors

Specifications of BLF6G20-180RN,112

• Transistor Type: LDMOS
• Frequency: 1.93GHz ~ 1.99GHz
• Gain: 17.2dB
• Voltage - Rated: 65V
• Current Rating: 49A
• Current - Test: 1.4A
• Voltage - Test: 30V
• Power - Output: 40W
• Package / Case: SOT502A
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Noise Figure: -
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant
• Other names: 934062731112

NXP Semiconductors
5. Thermal characteristics
6. Characteristics
7. Application information
BLF6G20-180RN_20LS-180RN_1
Product data sheet
7.1 Ruggedness in class-AB operation
Table 5.
Table 6.
T
Table 7.
Mode of operation: 2-carrier WCDMA; PAR = 7 dB at 0.01 % probability on the CCDF;
f
V
circuit.
The BLF6G20-180RN and BLF6G20LS-180RN are capable of withstanding a load
mismatch corresponding to VSWR = 10 : 1 through all phases under the following
conditions: V
Symbol
R
Symbol Parameter
V
V
V
I
I
I
g
R
C
Symbol
P
G
RL
IMD3
ACPR
1
DSS
DSX
GSS
j
DS
fs
D
(BR)DSS
GS(th)
GSq
L(AV)
th(j-case)
DS(on)
rs
= 1932.5 MHz; f
p
= 25 C unless otherwise specified.
in
= 30 V; I
drain-source breakdown
voltage
gate-source threshold voltage
gate-source quiescent voltage V
drain leakage current
drain cut-off current
gate leakage current
forward transconductance
drain-source on-state
resistance
feedback capacitance
Parameter
average output power
power gain
input return loss
drain efficiency
third order intermodulation distortion
adjacent channel power ratio
Thermal characteristics
Characteristics
Application information
Dq
Parameter
thermal resistance from
junction to case
DS
= 1400 mA; T
= 30 V; I
2
= 1942.5 MHz; f
Rev. 01 — 17 November 2008
Dq
case
= 1400 mA; P
= 25 C; unless otherwise specified; in a class-AB production test
3
= 1977.5 MHz; f
Conditions
T
P
case
L
Conditions
V
V
V
V
V
V
V
V
I
V
f = 1 MHz
= 40 W
D
GS
DS
DS
GS
GS
DS
GS
DS
GS
GS
L
= 9.45 A
= 80 C;
= 180 W (CW); f = 1990 MHz.
= 10 V; I
= 28 V; I
= 10 V
= 10 V; I
= 0 V; I
= 0 V; V
= V
= 13 V; V
= V
= 0 V; V
BLF6G20(LS)-180RN
GS(th)
GS(th)
Conditions
P
P
P
P
P
4
L(AV)
L(AV)
L(AV)
L(AV)
L(AV)
D
= 1987.5 MHz; RF performance at
DS
DS
D
D
D
= 0.9 mA
+ 3.75 V;
+ 3.75 V;
DS
= 270 mA
= 1.62 A
= 13.5 A
Type
BLF6G20-180RN
BLF6G20LS-180RN
= 28 V
= 30 V;
= 40 W
= 40 W
= 40 W
= 40 W
= 40 W
= 0 V
Power LDMOS transistor
Min
65
1.4
1.5
-
40
-
-
-
-
Min
-
16.3
-
24
-
-
Typ
-
2.0
2.0
-
45
-
19.5
0.06
3.3
© NXP B.V. 2008. All rights reserved.
Typ Max
40
17.2 -
27
15
38
41
Typ
0.50
0.37
-
-
Max
-
2.4
2.5
5
-
450
-
-
-
10
35
39
Unit
K/W
K/W
3 of 12
Unit
W
dB
dB
%
dBc
dBc
Unit
V
V
V
A
nA
S
pF
A