BLF6G10LS-200R,118 NXP Semiconductors, BLF6G10LS-200R,118 Datasheet - Page 3

• Manufacturer Part Number: BLF6G10LS-200R,118
• Description: IC BASESTATION FINAL SOT502B
• Manufacturer: NXP Semiconductors

Specifications of BLF6G10LS-200R,118

• Package / Case: SOT502B
• Transistor Type: LDMOS
• Frequency: 871.5MHz
• Gain: 20dB
• Voltage - Rated: 65V
• Current Rating: 49A
• Current - Test: 1.4A
• Voltage - Test: 28V
• Power - Output: 40W
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.06 Ohms
• Drain-source Breakdown Voltage: 65 V
• Gate-source Breakdown Voltage: - 0.5 V to + 13 V
• Continuous Drain Current: 49 A
• Maximum Operating Temperature: + 225 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 65 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Noise Figure: -
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant
• Other names: 934061248118; BLF6G10LS-200R /T3; BLF6G10LS-200R /T3

NXP Semiconductors
6. Characteristics
7. Application information
BLF6G10LS-200R_1
Preliminary data sheet
7.1 Ruggedness in class-AB operation
Table 6.
T
Table 7.
Mode of operation: 2-carrier W-CDMA; PAR 7.5 dB at 0.01 % probability on CCDF; 3GPP test
model 1; 1-64 PDPCH; f
RF performance at V
class-AB production test circuit.
The BLF6G10LS-200R is an enhanced rugged device and is capable of withstanding a
load mismatch corresponding to VSWR = 10 : 1 through all phases under the following
conditions: V
Symbol Parameter
V
V
V
I
I
I
g
R
C
Symbol
P
G
IRL
ACPR
DSS
DSX
GSS
j
fs
D
(BR)DSS
GS(th)
GSq
L(AV)
DS(on)
rs
p
= 25 C unless otherwise specified.
drain-source breakdown
voltage
gate-source threshold voltage
gate-source quiescent voltage V
drain leakage current
drain cut-off current
gate leakage current
forward transconductance
drain-source on-state
resistance
feedback capacitance
Parameter
average output power
power gain
input return loss
drain efficiency
adjacent channel power ratio
Characteristics
Application information
DS
= 28 V; I
DS
= 28 V; I
1
Rev. 01 — 21 January 2008
= 871.5 MHz; f
Dq
= 1400 mA; P
Dq
= 1400 mA; T
2
= 876.5 MHz; f
Conditions
V
V
I
V
V
V
V
V
V
I
V
f = 1 MHz
D
D
GS
DS
DS
GS
GS
DS
GS
DS
GS
GS
L
= 1620 mA
= 9.45 A
= 200 W; f = 894 MHz.
= 10 V; I
= 28 V;
= 10 V
= 10 V; I
= 0 V; I
= 0 V; V
= V
= 11 V; V
= V
= 0 V; V
case
GS(th)
GS(th)
Conditions
P
P
P
P
= 25 C; unless otherwise specified; in a
L(AV)
L(AV)
L(AV)
L(AV)
D
DS
DS
D
D
= 0.9 mA
+ 3.75 V;
+ 3.75 V;
DS
3
BLF6G10LS-200R
= 270 mA
= 9.45 A
= 40 W
= 40 W
= 40 W
= 40 W
= 886.5 MHz; f
= 28 V
= 28 V;
= 0 V
Power LDMOS transistor
Min
65
1.4
1.7
-
40
-
11
0.012 0.07
-
Min
-
19
-
25
-
4
= 891.5 MHz;
Typ
40
20
27.5
Typ
-
2.0
2.2
-
48
-
18
3
© NXP B.V. 2008. All rights reserved.
6.7
40.5
Max
-
21
-
Max
-
2.4
2.7
4.2
-
420
26
0.093
-
5.0
38.0 dBc
3 of 10
Unit
W
dB
dB
%
Unit
V
V
V
A
nA
S
pF
A