BLA1011-10,112 NXP Semiconductors, BLA1011-10,112 Datasheet - Page 3

• Manufacturer Part Number: BLA1011-10,112
• Description: TRANS LDMOS NCH 75V SOT467C
• Manufacturer: NXP Semiconductors

Specifications of BLA1011-10,112

• Transistor Type: LDMOS
• Frequency: 1.03GHz ~ 1.09GHz
• Gain: 15dB
• Voltage - Rated: 75V
• Current Rating: 2.2A
• Current - Test: 50mA
• Voltage - Test: 36V
• Power - Output: 10W
• Package / Case: SOT467C
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 1.2 Ohms
• Drain-source Breakdown Voltage: 75 V
• Gate-source Breakdown Voltage: +/- 15 V
• Continuous Drain Current: 2.2 A
• Power Dissipation: 25 W
• Maximum Operating Temperature: + 200 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 65 C
• Application: Avionics
• Channel Type: N
• Channel Mode: Enhancement
• Drain Source Voltage (max): 75V
• Output Power (max): 10W
• Power Gain (typ)@vds: 15(Min)@36VdB
• Frequency (min): 1.03GHz
• Frequency (max): 1.09GHz
• Package Type: LDMOST
• Pin Count: 3
• Forward Transconductance (typ): 0.5S
• Drain Source Resistance (max): 1200(Typ)@10Vmohm
• Operating Temp Range: -65C to 200C
• Drain Efficiency (typ): 40(Min)%
• Mounting: Screw
• Mode Of Operation: Class-AB
• Number Of Elements: 1
• Power Dissipation (max): 25000mW
• Vswr (max): 5
• Screening Level: Military
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Noise Figure: -
• Lead Free Status / Rohs Status: Details
• Other names: 934056836112; BLA1011-10; BLA1011-10

Philips Semiconductors
THERMAL CHARACTERISTICS
Notes
1. Thermal impedance is determined under RF operating conditions with pulsed bias.
2. Typical value for SOT467C mounted with thermal compound and 0.6 Nm fastening torque.
CHARACTERISTICS
T
APPLICATION INFORMATION
RF performance in a common source class-AB circuit. T
Ruggedness in class-AB operation
The BLA1011-10 is capable of withstanding a load mismatch corresponding to VSWR = 5 : 1 through all phases under
the operating conditions.
Typical impedance values
2003 Nov 19
Z
R
V
V
I
I
I
g
R
Pulsed class-AB;
t
j
DSS
DSX
GSS
p
fs
SYMBOL
th(j-mb)
SYMBOL
(BR)DSS
GSth
th(mb-h)
= 25 C unless otherwise specified.
DSon
Avionics LDMOS transistor
= 50 s;
FREQUENCY
OPERATION
MODE OF
(MHz)
1030
1060
1090
= 2%
thermal impedance from junction to mounting base
thermal resistance from mounting base to heatsink
drain-source breakdown voltage
gate-source threshold voltage
drain-source leakage current
on-state drain current
gate leakage current
forward transconductance
drain-source on-state resistance
1030 to 1090
1.3 + j 6.99
PARAMETER
(MHz)
1 + j 10.6
1.42 + j 7
f
( )
Z
S
PARAMETER
V
(V)
36
DS
5.99 + j 13.98
7 + j 11.58
4.3 + j 7
( )
(mA)
Z
I
50
DQ
L
V
V
V
V
V
V
V
GS
DS
GS
GS
GS
DS
GS
= 0; I
= 10 V; I
= 0; V
= V
= 15 V; V
= 10 V; I
= 10 V; I
h
(W)
P
10
= 25 C; R
GSth
CONDITIONS
L
3
D
DS
= 0.7 mA
+ 9 V; V
D
D
D
= 28 V
= 20 mA
= 0.75 A
= 0.75 A
DS
(dB)
>15
G
p
= 0
th mb-h
T
note 2
DS
mb
= 10 V 2.8
= 25 C; note 1
= 0.55 K/W unless otherwise specified.
>40
(%)
D
CONDITIONS
75
4
MIN.
(ns)
<20
t
r
0.5
1.2
TYP.
(ns)
<20
t
f
BLA1011-10
Product specification
5
0.1
40
VALUE
PULSE DROOP
MAX.
0.55
1.2
(dB)
<0.5
V
V
mA
A
nA
S
UNIT
UNIT
K/W
K/W