BLA1011-10,112 NXP Semiconductors, BLA1011-10,112 Datasheet - Page 5

• Manufacturer Part Number: BLA1011-10,112
• Description: TRANS LDMOS NCH 75V SOT467C
• Manufacturer: NXP Semiconductors

Specifications of BLA1011-10,112

• Transistor Type: LDMOS
• Frequency: 1.03GHz ~ 1.09GHz
• Gain: 15dB
• Voltage - Rated: 75V
• Current Rating: 2.2A
• Current - Test: 50mA
• Voltage - Test: 36V
• Power - Output: 10W
• Package / Case: SOT467C
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 1.2 Ohms
• Drain-source Breakdown Voltage: 75 V
• Gate-source Breakdown Voltage: +/- 15 V
• Continuous Drain Current: 2.2 A
• Power Dissipation: 25 W
• Maximum Operating Temperature: + 200 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 65 C
• Application: Avionics
• Channel Type: N
• Channel Mode: Enhancement
• Drain Source Voltage (max): 75V
• Output Power (max): 10W
• Power Gain (typ)@vds: 15(Min)@36VdB
• Frequency (min): 1.03GHz
• Frequency (max): 1.09GHz
• Package Type: LDMOST
• Pin Count: 3
• Forward Transconductance (typ): 0.5S
• Drain Source Resistance (max): 1200(Typ)@10Vmohm
• Operating Temp Range: -65C to 200C
• Drain Efficiency (typ): 40(Min)%
• Mounting: Screw
• Mode Of Operation: Class-AB
• Number Of Elements: 1
• Power Dissipation (max): 25000mW
• Vswr (max): 5
• Screening Level: Military
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Noise Figure: -
• Lead Free Status / Rohs Status: Details
• Other names: 934056836112; BLA1011-10; BLA1011-10

Philips Semiconductors
List of components for class-AB test circuit (see Fig.6)
Notes
1. American Technical Ceramics type 100A or capacitor of same quality.
2. American Technical Ceramics type 200B or capacitor of same quality.
2003 Nov 19
handbook, full pagewidth
C1
C2, C11
C3
C4
C5
C6
C7, C13
C8
C9
C10
C12
C14
C15
R1
Avionics LDMOS transistor
Dimensions in mm.
The components are situated on one side of the Rogers 6006 printed-circuit board (thickness = 0.64 mm;
and serves as a ground plane. Earth connections from the component side to the ground plane are made by through-metallization.
COMPONENT
C1 C2
multilayer ceramic chip capacitor; note 1
multilayer ceramic chip capacitor; note 1
tekelec trimmer; type 37293
multilayer ceramic chip capacitor; note 1
multilayer ceramic chip capacitor; note 1
multilayer ceramic chip capacitor; note 1
multilayer ceramic chip capacitor; note 1
multilayer ceramic chip capacitor; note 1
multilayer ceramic chip capacitor; note 1
multilayer ceramic chip capacitor; note 1
multilayer ceramic chip capacitor; note 2
electrolytic capacitor
multilayer ceramic chip capacitor; note 1
SMD resistor (0805)
51.75
37.5
Fig.6 Printed-circuit board for class-AB test circuit.
C14
C3
3.2
13.5
C7
C4
C6
C5
DESCRIPTION
C15
R1
5
C8
3.5
6.0
9.3
C9
C10
51.75
r
C13
C12
= 6.2), the other side is unetched
C11
2.7 pF
56 pF
0.8 to 8 pF
3.6 pF
6.2 pF
2 pF
62 pF
11 pF
1.5 pF
6.2 pF
20 nF
4.7 F; 50 V
36 pF
22
BLA1011-10
Product specification
MGU497
VALUE
60