BLA1011-10,112 NXP Semiconductors, BLA1011-10,112 Datasheet - Page 4

• Manufacturer Part Number: BLA1011-10,112
• Description: TRANS LDMOS NCH 75V SOT467C
• Manufacturer: NXP Semiconductors

Specifications of BLA1011-10,112

• Transistor Type: LDMOS
• Frequency: 1.03GHz ~ 1.09GHz
• Gain: 15dB
• Voltage - Rated: 75V
• Current Rating: 2.2A
• Current - Test: 50mA
• Voltage - Test: 36V
• Power - Output: 10W
• Package / Case: SOT467C
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 1.2 Ohms
• Drain-source Breakdown Voltage: 75 V
• Gate-source Breakdown Voltage: +/- 15 V
• Continuous Drain Current: 2.2 A
• Power Dissipation: 25 W
• Maximum Operating Temperature: + 200 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 65 C
• Application: Avionics
• Channel Type: N
• Channel Mode: Enhancement
• Drain Source Voltage (max): 75V
• Output Power (max): 10W
• Power Gain (typ)@vds: 15(Min)@36VdB
• Frequency (min): 1.03GHz
• Frequency (max): 1.09GHz
• Package Type: LDMOST
• Pin Count: 3
• Forward Transconductance (typ): 0.5S
• Drain Source Resistance (max): 1200(Typ)@10Vmohm
• Operating Temp Range: -65C to 200C
• Drain Efficiency (typ): 40(Min)%
• Mounting: Screw
• Mode Of Operation: Class-AB
• Number Of Elements: 1
• Power Dissipation (max): 25000mW
• Vswr (max): 5
• Screening Level: Military
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Noise Figure: -
• Lead Free Status / Rohs Status: Details
• Other names: 934056836112; BLA1011-10; BLA1011-10

Philips Semiconductors
2003 Nov 19
handbook, halfpage
handbook, halfpage
Avionics LDMOS transistor
T
t
(1) f = 1090 MHz.
(2) f = 1060 MHz.
(3) f = 1030 MHz.
Fig.2
T
P
Fig.4
p
h
h
(dB)
L
G p
= 50 s;
= 25 C; V
= 25 C; V
= 10 W; t
(W)
P L
24
20
16
12
15
10
1000
8
4
0
5
0
0
Load power as a function of drive power;
typical values.
Power gain as a function of frequency;
typical values.
p
= 2%.
DS
DS
= 50 s; = 2%.
= 36 V; I
= 36 V; I
1040
50
DQ
DQ
(1)
= 50 mA; class-AB;
= 50 mA; class-AB;
(2)
1080
(3)
100
P D (mW)
f (MHz)
MGU495
MGU494
1120
150
4
handbook, halfpage
handbook, halfpage
T
t
(1) f = 1090 MHz.
(2) f = 1060 MHz.
(3) f = 1030 MHz.
Fig.3
T
f = 1090 MHz; t
Fig.5
p
h
h
(dB)
= 50 s;
G p
= 25 C; V
= 25 C; V
(W)
P L
12
24
20
16
12
8
4
0
8
4
0
0
0
Power gain and efficiency as functions of
load power; typical values.
Load power as a function of gate-source
voltage; typical values.
= 2%.
DS
DS
p
= 36 V; I
= 36 V; I
= 50 s; = 2%.
1
(3)
(2)
DQ
DQ
5
(1)
= 50 mA; class-AB;
= 50 mA; class-AB;
2
3
10
BLA1011-10
Product specification
P L (W)
4
V GS (V)
G p
D
MGU496
MGU493
15
5
60
50
40
30
20
10
0
(%)
D