BLF6G22-180PN,112 NXP Semiconductors, BLF6G22-180PN,112 Datasheet - Page 4

• Manufacturer Part Number: BLF6G22-180PN,112
• Description: TRANS BASESTATION 2-LDMOST
• Manufacturer: NXP Semiconductors

Specifications of BLF6G22-180PN,112

• Package / Case: SOT539A
• Transistor Type: LDMOS
• Frequency: 2.11GHz ~ 2.17GHz
• Gain: 17.5dB
• Voltage - Rated: 65V
• Current - Test: 1.6A
• Voltage - Test: 32V
• Power - Output: 50W
• Configuration: Dual Common Source
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.165 Ohms
• Drain-source Breakdown Voltage: 65 V
• Gate-source Breakdown Voltage: 13 V
• Maximum Operating Temperature: + 225 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 65 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Current Rating: -
• Noise Figure: -
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant
• Other names: 934061276112; BLF6G22-180PN; BLF6G22-180PN

NXP Semiconductors
BLF6G22-180PN_2
Product data sheet
Fig 2.
(dB)
G
p
22
20
18
16
14
12
0
V
f
Two-tone CW power gain and drain efficiency
as functions of peak envelope load power;
typical values
2
DS
= 2170.1 MHz.
= 32 V; I
Dq
100
= 1600 mA; f
Fig 1.
G
D
p
V
One-tone CW power gain and drain efficiency as functions of load power; typical
values
1
200
DS
= 2170 MHz;
= 32 V; I
P
L(PEP)
001aah633
(W)
Dq
(dB)
G
= 1600 mA; f = 2170 MHz.
300
p
Rev. 02 — 23 April 2008
20
18
16
14
50
40
30
20
10
0
(%)
0
D
50
Fig 3.
(dBc)
IMD
10
30
50
70
0
V
f
Two-tone intermodulation distortion as a
function of peak envelope load power; typical
values
100
2
DS
= 2170.1 MHz.
= 32 V; I
G
D
p
150
Dq
100
BLF6G22-180PN
= 1600 mA; f
P
001aah632
L
(W)
200
Power LDMOS transistor
60
40
20
0
(%)
1
200
D
= 2170 MHz;
IMD3
IMD5
IMD7
P
L(PEP)
© NXP B.V. 2008. All rights reserved.
001aah634
(W)
300
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