BLF6G22-180PN,112 NXP Semiconductors, BLF6G22-180PN,112 Datasheet - Page 5

• Manufacturer Part Number: BLF6G22-180PN,112
• Description: TRANS BASESTATION 2-LDMOST
• Manufacturer: NXP Semiconductors

Specifications of BLF6G22-180PN,112

• Package / Case: SOT539A
• Transistor Type: LDMOS
• Frequency: 2.11GHz ~ 2.17GHz
• Gain: 17.5dB
• Voltage - Rated: 65V
• Current - Test: 1.6A
• Voltage - Test: 32V
• Power - Output: 50W
• Configuration: Dual Common Source
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.165 Ohms
• Drain-source Breakdown Voltage: 65 V
• Gate-source Breakdown Voltage: 13 V
• Maximum Operating Temperature: + 225 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 65 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Current Rating: -
• Noise Figure: -
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant
• Other names: 934061276112; BLF6G22-180PN; BLF6G22-180PN

NXP Semiconductors
BLF6G22-180PN_2
Product data sheet
Fig 4.
Fig 6.
(dB)
(dB)
G
G
p
p
21
20
19
18
17
16
15
14
21
20
19
18
17
16
15
14
0
0
V
f
2-carrier W-CDMA power gain and drain
efficiency as functions of average load power;
typical values
V
f
2-carrier W-CDMA power gain and drain
efficiency as functions of average load power;
typical values
2
2
DS
DS
= 2167.5 MHz; carrier spacing 5 MHz.
= 2167.5 MHz; carrier spacing 10 MHz.
= 32 V; I
= 32 V; I
10
10
20
20
Dq
Dq
= 1600 mA; f
= 1600 mA; f
30
30
40
40
G
G
1
1
D
D
p
p
= 2162.5 MHz;
= 2157.5 MHz;
50
50
001aah635
001aah637
P
P
60
60
L(AV)
L(AV)
(W)
(W)
70
70
Rev. 02 — 23 April 2008
35
30
25
20
15
10
5
0
35
30
25
20
15
10
5
0
(%)
(%)
D
D
Fig 5.
Fig 7.
ACPR,
ACPR
(dBc)
IMD3
(dBc)
20
30
40
50
60
20
30
40
50
60
0
V
f
2-carrier W-CDMA adjacent channel power
ratio as function of average load power;
typical values
0
V
f
2-carrier W-CDMA adjacent channel power
ratio and third order intermodulation distortion
as functions of average load power; typical
values
2
2
DS
DS
= 2167.5 MHz; carrier spacing 5 MHz.
= 2167.5 MHz; carrier spacing 10 MHz.
= 32 V; I
= 32 V; I
10
10
20
20
Dq
Dq
BLF6G22-180PN
= 1600 mA; f
= 1600 mA; f
30
30
Power LDMOS transistor
40
40
1
1
= 2162.5 MHz;
= 2157.5 MHz;
50
50
ACPR
IMD3
© NXP B.V. 2008. All rights reserved.
001aah636
001aah638
P
P
60
60
L(AV)
L(AV)
(W)
(W)
70
70
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