MRF6S20010NR1 Freescale Semiconductor, MRF6S20010NR1 Datasheet - Page 16
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MRF6S20010NR1
Manufacturer Part Number
MRF6S20010NR1
Description
MOSFET RF N-CH 28V 10W TO270-2
Manufacturer
Freescale Semiconductor
Datasheet
1.MRF6S20010GNR1.pdf
(27 pages)
Specifications of MRF6S20010NR1
Transistor Type
N-Channel
Frequency
2.17GHz
Gain
15.5dB
Voltage - Rated
68V
Current Rating
10µA
Current - Test
130mA
Voltage - Test
28V
Power - Output
10W
Package / Case
TO-270-2
Channel Type
N
Channel Mode
Enhancement
Drain Source Voltage (max)
68V
Output Power (max)
1W
Power Gain (typ)@vds
15.5/15.5/15.5/16dB
Frequency (min)
1.6GHz
Frequency (max)
2.2GHz
Package Type
TO-270
Pin Count
3
Input Capacitance (typ)@vds
0.12@28VpF
Output Capacitance (typ)@vds
20@28VpF
Reverse Capacitance (typ)
11.6@28VpF
Operating Temp Range
-65C to 225C
Drain Efficiency (typ)
36%
Mounting
Surface Mount
Mode Of Operation
1-Carrier N-CDMA/2-Carrier W-CDMA/2-Tone/GSM EDGE/IS-95
Number Of Elements
1
Vswr (max)
5
Screening Level
Military
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Noise Figure
-
Lead Free Status / Rohs Status
Compliant
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
MRF6S20010NR1
Manufacturer:
Skyworks
Quantity:
1 400
16
MRF6S20010NR1 MRF6S20010GNR1
−50
−55
−60
−65
−70
−75
−80
0.1
Figure 27. Spectral Regrowth at 400 kHz and
V
I
f = 1840 MHz
DQ
DD
= 130 mA
= 28 Vdc
600 kHz versus Output Power
P
out
, OUTPUT POWER (WATTS)
GSM EDGE TYPICAL CHARACTERISTICS
17
16
15
14
13
6
5
4
3
2
1
0
1800
Figure 25. Power Gain, Input Return Loss and Drain
0.1
1
Figure 26. Error Vector Magnitude and Drain
Efficiency versus Frequency @ P
V
I
f = 1840 MHz
DQ
1810 1820 1830 1840 1850 1860 1870 1880 1890
DD
= 130 mA
SR @ 400 kHz
= 28 Vdc
Efficiency versus Output Power
SR @ 600 kHz
P
out
, OUTPUT POWER (WATTS) AVG.
f, FREQUENCY (MHz)
G
η
ps
D
1
10
IRL
η
D
EVM
−100
−110
−10
−20
−30
−40
−50
−60
−70
−80
−90
out
V
I
DQ
DD
= 130 mA
= 4 Watts
Center 1.96 GHz
= 28 Vdc
600 kHz
— 1805 - 1880 MHz
Reference Power
400 kHz
1900
10
Figure 28. EDGE Spectrum
60
50
40
30
20
10
0
GSM EDGE TEST SIGNAL
50
40
30
20
10
0
−10
−20
−30
−40
200 kHz
Freescale Semiconductor
VBW = 30 kHz
Sweep Time = 70 ms
RBW = 30 kHz
RF Device Data
400 kHz
Span 2 MHz
600 kHz