MRF6S20010NR1 Freescale Semiconductor, MRF6S20010NR1 Datasheet - Page 3
![no-image](/images/manufacturer_photos/0/2/262/freescale_semiconductor_sml.jpg)
MRF6S20010NR1
Manufacturer Part Number
MRF6S20010NR1
Description
MOSFET RF N-CH 28V 10W TO270-2
Manufacturer
Freescale Semiconductor
Datasheet
1.MRF6S20010GNR1.pdf
(27 pages)
Specifications of MRF6S20010NR1
Transistor Type
N-Channel
Frequency
2.17GHz
Gain
15.5dB
Voltage - Rated
68V
Current Rating
10µA
Current - Test
130mA
Voltage - Test
28V
Power - Output
10W
Package / Case
TO-270-2
Channel Type
N
Channel Mode
Enhancement
Drain Source Voltage (max)
68V
Output Power (max)
1W
Power Gain (typ)@vds
15.5/15.5/15.5/16dB
Frequency (min)
1.6GHz
Frequency (max)
2.2GHz
Package Type
TO-270
Pin Count
3
Input Capacitance (typ)@vds
0.12@28VpF
Output Capacitance (typ)@vds
20@28VpF
Reverse Capacitance (typ)
11.6@28VpF
Operating Temp Range
-65C to 225C
Drain Efficiency (typ)
36%
Mounting
Surface Mount
Mode Of Operation
1-Carrier N-CDMA/2-Carrier W-CDMA/2-Tone/GSM EDGE/IS-95
Number Of Elements
1
Vswr (max)
5
Screening Level
Military
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Noise Figure
-
Lead Free Status / Rohs Status
Compliant
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
MRF6S20010NR1
Manufacturer:
Skyworks
Quantity:
1 400
RF Device Data
Freescale Semiconductor
Table 5. Electrical Characteristics
Typical 2 - Carrier W - CDMA Performances (In Freescale CDMA Test Fixture, 50 ohm system) V
1 W Avg., f1 = 2112.5 MHz, f2 = 2122.5 MHz and f1 = 2157.5 MHz, f2 = 2167.5 MHz, 2 - Carrier W - CDMA, 3.84 MHz Channel Bandwidth
Carriers. ACPR measured in 3.84 MHz Channel Bandwidth @ ±5 MHz Offset. IM3 measured in 3.84 MHz Bandwidth @ ±10 MHz Offset.
PAR = 8.5 dB @ 0.01% Probability on CCDF.
Typical N - CDMA Performances (In Freescale Test Fixture, 50 ohm system) V
1930 MHz<Frequency<1990 MHz, Single - Carrier N - CDMA, 1.2288 MHz Channel Bandwidth Carrier. ACPR measured in 30 kHz Channel
Bandwidth @ ±885 kHz Offset. PAR = 9.8 dB @ 0.01% Probability on CCDF
Typical GSM EDGE Performances (In Freescale GSM EDGE Test Fixture, 50 οhm system) V
1805 - 1880 MHz, EDGE Modulation
Power Gain
Drain Efficiency
Gain Flatness in 30 MHz Bandwidth @ P
Intermodulation Distortion
Adjacent Channel Power Ratio
Power Gain
Drain Efficiency
Gain Flatness in 30 MHz Bandwidth @ P
Adjacent Channel Power Ratio
Power Gain
Drain Efficiency
Gain Flatness in 30 MHz Bandwidth @ P
Error Vector Magnitude
Spectral Regrowth at 400 kHz Offset
Spectral Regrowth at 600 kHz Offset
Characteristic
(T
out
out
out
A
= 25°C unless otherwise noted) (continued)
= 1 W CW
= 1 W CW
= 4 W CW
Symbol
DD
ACPR
ACPR
EVM
SR1
SR2
G
IM3
G
G
η
G
η
G
η
G
ps
= 28 Vdc, I
ps
ps
D
D
D
F
F
F
DQ
Min
DD
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
= 130 mA, P
DD
= 28 Vdc, I
MRF6S20010NR1 MRF6S20010GNR1
= 28 Vdc, I
15.5
15.5
Typ
- 47
- 49
- 60
- 60
- 70
0.3
0.3
0.3
1.3
15
16
16
33
DQ
out
DQ
= 130 mA, P
= 1 W Avg.,
= 130 mA, P
Max
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
out
out
= 4 W Avg.,
=
% rms
Unit
dBc
dBc
dBc
dBc
dBc
dB
dB
dB
dB
dB
dB
%
%
%
3