MRF6S20010NR1 Freescale Semiconductor, MRF6S20010NR1 Datasheet - Page 3

• Manufacturer Part Number: MRF6S20010NR1
• Description: MOSFET RF N-CH 28V 10W TO270-2
• Manufacturer: Freescale Semiconductor

Specifications of MRF6S20010NR1

• Transistor Type: N-Channel
• Frequency: 2.17GHz
• Gain: 15.5dB
• Voltage - Rated: 68V
• Current Rating: 10µA
• Current - Test: 130mA
• Voltage - Test: 28V
• Power - Output: 10W
• Package / Case: TO-270-2
• Channel Type: N
• Channel Mode: Enhancement
• Drain Source Voltage (max): 68V
• Output Power (max): 1W
• Power Gain (typ)@vds: 15.5/15.5/15.5/16dB
• Frequency (min): 1.6GHz
• Frequency (max): 2.2GHz
• Package Type: TO-270
• Pin Count: 3
• Input Capacitance (typ)@vds: 0.12@28VpF
• Output Capacitance (typ)@vds: 20@28VpF
• Reverse Capacitance (typ): 11.6@28VpF
• Operating Temp Range: -65C to 225C
• Drain Efficiency (typ): 36%
• Mounting: Surface Mount
• Mode Of Operation: 1-Carrier N-CDMA/2-Carrier W-CDMA/2-Tone/GSM EDGE/IS-95
• Number Of Elements: 1
• Vswr (max): 5
• Screening Level: Military
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Noise Figure: -
• Lead Free Status / Rohs Status: Compliant

RF Device Data
Freescale Semiconductor
Table 5. Electrical Characteristics
Typical 2 - Carrier W - CDMA Performances (In Freescale CDMA Test Fixture, 50 ohm system) V
1 W Avg., f1 = 2112.5 MHz, f2 = 2122.5 MHz and f1 = 2157.5 MHz, f2 = 2167.5 MHz, 2 - Carrier W - CDMA, 3.84 MHz Channel Bandwidth
Carriers. ACPR measured in 3.84 MHz Channel Bandwidth @ ±5 MHz Offset. IM3 measured in 3.84 MHz Bandwidth @ ±10 MHz Offset.
PAR = 8.5 dB @ 0.01% Probability on CCDF.
Typical N - CDMA Performances (In Freescale Test Fixture, 50 ohm system) V
1930 MHz<Frequency<1990 MHz, Single - Carrier N - CDMA, 1.2288 MHz Channel Bandwidth Carrier. ACPR measured in 30 kHz Channel
Bandwidth @ ±885 kHz Offset. PAR = 9.8 dB @ 0.01% Probability on CCDF
Typical GSM EDGE Performances (In Freescale GSM EDGE Test Fixture, 50 οhm system) V
1805 - 1880 MHz, EDGE Modulation
Power Gain
Drain Efficiency
Gain Flatness in 30 MHz Bandwidth @ P
Intermodulation Distortion
Adjacent Channel Power Ratio
Power Gain
Drain Efficiency
Gain Flatness in 30 MHz Bandwidth @ P
Adjacent Channel Power Ratio
Power Gain
Drain Efficiency
Gain Flatness in 30 MHz Bandwidth @ P
Error Vector Magnitude
Spectral Regrowth at 400 kHz Offset
Spectral Regrowth at 600 kHz Offset
Characteristic
(T
out
out
out
A
= 25°C unless otherwise noted) (continued)
= 1 W CW
= 1 W CW
= 4 W CW
Symbol
DD
ACPR
ACPR
EVM
SR1
SR2
G
IM3
G
G
η
G
η
G
η
G
ps
= 28 Vdc, I
ps
ps
D
D
D
F
F
F
DQ
Min
DD
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
= 130 mA, P
DD
= 28 Vdc, I
MRF6S20010NR1 MRF6S20010GNR1
= 28 Vdc, I
15.5
15.5
Typ
- 47
- 49
- 60
- 60
- 70
0.3
0.3
0.3
1.3
15
16
16
33
DQ
out
DQ
= 130 mA, P
= 1 W Avg.,
= 130 mA, P
Max
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
out
out
= 4 W Avg.,
=
% rms
Unit
dBc
dBc
dBc
dBc
dBc
dB
dB
dB
dB
dB
dB
%
%
%
3