MRF6S20010NR1 Freescale Semiconductor, MRF6S20010NR1 Datasheet - Page 18

• Manufacturer Part Number: MRF6S20010NR1
• Description: MOSFET RF N-CH 28V 10W TO270-2
• Manufacturer: Freescale Semiconductor

Specifications of MRF6S20010NR1

• Transistor Type: N-Channel
• Frequency: 2.17GHz
• Gain: 15.5dB
• Voltage - Rated: 68V
• Current Rating: 10µA
• Current - Test: 130mA
• Voltage - Test: 28V
• Power - Output: 10W
• Package / Case: TO-270-2
• Channel Type: N
• Channel Mode: Enhancement
• Drain Source Voltage (max): 68V
• Output Power (max): 1W
• Power Gain (typ)@vds: 15.5/15.5/15.5/16dB
• Frequency (min): 1.6GHz
• Frequency (max): 2.2GHz
• Package Type: TO-270
• Pin Count: 3
• Input Capacitance (typ)@vds: 0.12@28VpF
• Output Capacitance (typ)@vds: 20@28VpF
• Reverse Capacitance (typ): 11.6@28VpF
• Operating Temp Range: -65C to 225C
• Drain Efficiency (typ): 36%
• Mounting: Surface Mount
• Mode Of Operation: 1-Carrier N-CDMA/2-Carrier W-CDMA/2-Tone/GSM EDGE/IS-95
• Number Of Elements: 1
• Vswr (max): 5
• Screening Level: Military
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Noise Figure: -
• Lead Free Status / Rohs Status: Compliant

Table 9. Common Source Scattering Parameters
18
MRF6S20010NR1 MRF6S20010GNR1
1000
1050
1200
1250
1300
1350
1400
1450
1500
1550
1600
1650
1700
1750
1800
1850
1900
1950
2000
2050
2100
2150
2200
2250
2300
2350
2400
2450
MH
MHz
1100
1150
500
550
600
650
700
750
800
850
900
950
f
0.984
0.986
0.985
0.986
0.982
0.983
0.983
0.979
0.980
0.977
0.978
0.972
0.972
0.963
0.964
0.956
0.948
0.939
0.927
0.910
0.889
0.861
0.821
0.780
0.722
0.666
0.618
0.603
0.614
0.654
0.701
0.747
0.783
0.816
0.842
0.864
0.882
0.894
0.906
0.910
|S
11
|
S
11
- 178.1
- 179.0
- 175.6
- 173.5
- 172.7
- 172.6
- 172.9
- 173.6
- 174.2
- 175.0
- 175.7
- 176.4
- 176.9
179.9
178.9
177.9
177.2
176.5
175.5
174.8
174.0
173.2
172.4
171.4
170.8
169.9
169.0
167.8
167.0
165.7
164.5
163.2
161.9
160.9
160.1
160.6
162.5
167.0
173.3
179.7
∠ φ
1.195
0.947
0.747
0.581
0.446
0.336
0.248
0.188
0.168
0.183
0.223
0.276
0.335
0.396
0.461
0.531
0.604
0.685
0.772
0.869
0.975
1.093
1.221
1.356
1.491
1.606
1.687
1.706
1.673
1.591
1.484
1.364
1.242
1.136
1.042
0.961
0.888
0.822
0.764
0.712
|S
21
|
(V
DD
S
21
= 28 V, I
42.42
40.48
39.66
39.89
41.80
46.70
56.02
72.74
96.69
119.3
134.3
142.2
146.4
148.5
148.8
148.2
146.9
144.8
142.2
138.7
134.7
129.7
123.8
116.7
108.3
98.77
88.09
76.98
66.08
55.96
47.04
39.29
32.87
27.69
23.26
19.26
15.75
12.69
9.857
7.587
∠ φ
DQ
= 126 mA, T
0.001
0.001
0.001
0.001
0.001
0.002
0.002
0.003
0.003
0.004
0.004
0.004
0.005
0.005
0.006
0.007
0.007
0.008
0.008
0.009
0.010
0.010
0.011
0.012
0.013
0.014
0.014
0.013
0.012
0.011
0.010
0.008
0.006
0.004
0.004
0.005
0.006
0.008
0.009
0.008
|S
12
A
|
= 25°C, 50 ohm system)
S
12
- 129.1
- 159.2
147.4
108.1
102.9
96.99
97.40
94.63
91.92
92.80
89.92
89.90
87.51
89.25
86.98
85.08
82.40
79.69
77.79
75.79
72.86
69.89
63.71
57.70
49.85
41.19
32.65
25.40
20.73
10.13
6.333
15.63
42.20
57.76
62.56
59.72
49.09
39.24
119.1
15.11
∠ φ
Freescale Semiconductor
0.875
0.892
0.905
0.913
0.927
0.935
0.941
0.947
0.951
0.955
0.960
0.962
0.966
0.977
0.971
0.977
0.982
0.986
0.988
0.994
0.991
0.993
0.996
0.984
0.985
0.977
0.970
0.958
0.954
0.945
0.947
0.947
0.945
0.944
0.944
0.948
0.948
0.949
0.951
0.955
|S
22
|
S
RF Device Data
22
- 121.6
- 125.9
- 129.9
- 133.4
- 136.4
- 139.5
- 141.9
- 144.4
- 146.6
- 148.6
- 150.5
- 152.2
- 153.7
- 155.2
- 156.8
- 157.9
- 159.5
- 160.7
- 162.1
- 163.4
- 164.7
- 166.0
- 167.4
- 168.5
- 169.6
- 170.8
- 171.3
- 171.9
- 172.3
- 172.6
- 173.0
- 173.6
- 173.9
- 174.2
- 174.6
- 175.2
- 175.7
- 176.1
- 176.5
- 116.3
(continued)
∠ φ