MRF6S27015NR1 Freescale Semiconductor, MRF6S27015NR1 Datasheet - Page 18

• Manufacturer Part Number: MRF6S27015NR1
• Description: IC MOSFET RF N-CHAN TO270-2
• Manufacturer: Freescale Semiconductor

Specifications of MRF6S27015NR1

• Transistor Type: N-Channel
• Frequency: 2.6GHz
• Gain: 14dB
• Voltage - Rated: 68V
• Current Rating: 10µA
• Current - Test: 160mA
• Voltage - Test: 28V
• Power - Output: 3W
• Package / Case: TO-270-2
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant
• Noise Figure: -

Application Notes
• AN1907: Solder Reflow Attach Method for High Power RF Devices in Plastic Packages
• AN1955: Thermal Measurement Methodology of RF Power Amplifiers
Engineering Bulletins
• EB212: Using Data Sheet Impedances for RF LDMOS Devices
MRF6S27015NR1 MRF6S27015GNR1
18
Revision
Refer to the following documents to aid your design process.
The following table summarizes revisions to this document.
0
1
2
June 2007
Aug. 2006
Dec. 2008
Date
• Initial Release of Data Sheet
• Added Case Operating Temperature limit to the Maximum Ratings table and set limit to 150_C, p. 1
• Operating Junction Temperature increased from 200_C to 225_C in Maximum Ratings table, related
• Removed footnote and “Measured in Functional Test” from the RF test condition voltage callout for V
• V
• Output Capacitance Typ value corrected in Dynamic Characteristics table, p. 2
• Updated Part Numbers in Table 6, Component Designations and Values, to RoHS compliant part
• Replaced Fig. 14, MTTF versus Junction Temperature with updated graph. Removed Amps
• Fig. 15, CCDF W - CDMA 3GPP, Test Model 1, 64 DPCH, 50% Clipping, Single - Carrier Test Signal,
• Updated Fig. 16, Single - Carrier W - CDMA Spectrum, to correctly reflect integrated bandwidth offsets, p. 8
• Changed Typical Performance Full Frequency Band to f = 2600 MHz to match Functional Test specification,
• Changed Storage Temperature Range in Max Ratings table from - 65 to +175 to - 65 to +150 for
• Replaced Case Outline 1265 - 08 with 1265 - 09, Issue K, p. 1, 12 - 14. Corrected cross hatch pattern in
• Replaced Case Outline 1265A - 02 with 1265A - 03, Issue C, p. 1, 15 - 17. Corrected cross hatch pattern and
• Added footnote, Measurement made with device in straight lead configuration before any lead forming
• Updated Part Numbers in Table 6, Component Designations and Values, to latest RoHS compliant part
“Continuous use at maximum temperature will affect MTTF” footnote added and changed 200_C to
225_C in Capable Plastic Package bullet, p, 1
and added Fixture Gate Quiescent Voltage, V
numbers, p. 3
operating characteristics and location of MTTF calculator for device, p. 7
updated to remove IM3 measurement copy from callout in graph, p. 8
p. 1
standardization across products, p. 1
bottom view and changed its dimensions (D2 and E3) to minimum value on source contact (D2 changed
from Min - Max .290 - .320 to .290 Min; E3 changed from Min - Max .150 - .180 to .150 Min). Added JEDEC
Standard Package Number.
its dimensions (D2 and E2) on source contact (D2 changed from Min - Max .290 - .320 to .290 Min; E3
changed from Min - Max .150 - .180 to .150 Min). Added pin numbers. Corrected mm dimension L for
gull - wing foot from 4.90 - 5.06 Min - Max to 0.46 - 0.61 Min - Max. Added JEDEC Standard Package Number.
operation is applied, to Functional Tests table, p. 2.
numbers, p. 3
DS(on)
Typ and Min values corrected in On Characteristics table, p. 2
PRODUCT DOCUMENTATION
REVISION HISTORY
Description
GG(Q)
to On Characteristics table, p. 2
Freescale Semiconductor
RF Device Data
2
and listed
GS(Q)
,