MRF6S27015NR1 Freescale Semiconductor, MRF6S27015NR1 Datasheet - Page 2

• Manufacturer Part Number: MRF6S27015NR1
• Description: IC MOSFET RF N-CHAN TO270-2
• Manufacturer: Freescale Semiconductor

Specifications of MRF6S27015NR1

• Transistor Type: N-Channel
• Frequency: 2.6GHz
• Gain: 14dB
• Voltage - Rated: 68V
• Current Rating: 10µA
• Current - Test: 160mA
• Voltage - Test: 28V
• Power - Output: 3W
• Package / Case: TO-270-2
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant
• Noise Figure: -

MRF6S27015NR1 MRF6S27015GNR1
2
Table 3. ESD Protection Characteristics
Table 4. Moisture Sensitivity Level
Table 5. Electrical Characteristics
Off Characteristics
On Characteristics
Dynamic Characteristics
Functional Tests
W - CDMA, 3.84 MHz Channel Bandwidth Carriers. ACPR measured in 3.84 MHz Channel Bandwidth @ ±5 MHz Offset. PAR = 8.5 dB @
0.01% Probability on CCDF.
Human Body Model (per JESD22 - A114)
Machine Model (per EIA/JESD22 - A115)
Charge Device Model (per JESD22 - C101)
Per JESD 22 - A113, IPC/JEDEC J - STD - 020
Zero Gate Voltage Drain Leakage Current
Zero Gate Voltage Drain Leakage Current
Gate - Source Leakage Current
Gate Threshold Voltage
Gate Quiescent Voltage
Fixture Gate Quiescent Voltage
Drain - Source On - Voltage
Reverse Transfer Capacitance
Output Capacitance
Power Gain
Drain Efficiency
Adjacent Channel Power Ratio
Input Return Loss
1. V
2. Part internally input matched.
3. Measurement made with device in straight lead configuration before any lead forming operation is applied.
(V
(V
(V
(V
(V
(V
(V
(V
(V
schematic.
DS
DS
GS
DS
DS
DD
GS
DS
DS
GG
= 68 Vdc, V
= 28 Vdc, V
= 10 Vdc, I
= 28 Vdc, I
= 28 Vdc ± 30 mV(rms)ac @ 1 MHz, V
= 28 Vdc ± 30 mV(rms)ac @ 1 MHz, V
= 5 Vdc, V
= 28 Vdc, I
= 10 Vdc, I
= 11/10 x V
(3)
DS
D
D
D
D
(In Freescale Test Fixture, 50 ohm system) V
GS
GS
GS(Q)
= 40 μAdc)
= 160 mAdc)
= 160 mAdc, Measured in Functional Test)
= 0.4 Adc)
= 0 Vdc)
= 0 Vdc)
= 0 Vdc)
. Parameter measured on Freescale Test Fixture, due to resistive divider network on the board. Refer to Test Circuit
(2)
Test Methodology
Characteristic
Test Methodology
(1)
(T
C
= 25°C unless otherwise noted)
GS
GS
= 0 Vdc)
= 0 Vdc)
DD
= 28 Vdc, I
Symbol
V
Rating
V
V
V
ACPR
I
I
I
C
DS(on)
C
DQ
GS(th)
GS(Q)
GG(Q)
G
IRL
DSS
DSS
GSS
η
3
oss
rss
ps
D
= 160 mA, P
12.5
Min
Package Peak Temperature
1.5
2.2
—
—
—
—
—
—
—
19
—
—
out
= 3 W Avg., f = 2600 MHz, Single - Carrier
1A (Minimum)
IV (Minimum)
A (Minimum)
0.27
22.9
11.6
260
Typ
- 45
- 18
2.2
2.8
3.1
14
22
—
—
—
Class
Freescale Semiconductor
Max
500
- 42
3.5
4.4
0.4
10
16
—
—
—
—
- 9
1
RF Device Data
μAdc
μAdc
nAdc
Unit
Unit
Vdc
Vdc
Vdc
Vdc
dBc
dB
dB
°C
pF
pF
%