MRF7S38010HR3 Freescale Semiconductor, MRF7S38010HR3 Datasheet - Page 14

• Manufacturer Part Number: MRF7S38010HR3
• Description: MOSFET RF N-CH 2W 30V NI-400
• Manufacturer: Freescale Semiconductor

Specifications of MRF7S38010HR3

• Transistor Type: N-Channel
• Frequency: 3.4GHz
• Gain: 15dB
• Voltage - Rated: 65V
• Current Rating: 10µA
• Current - Test: 160mA
• Voltage - Test: 30V
• Power - Output: 2W
• Package / Case: NI-400
• Channel Type: N
• Channel Mode: Enhancement
• Drain Source Voltage (max): 65V
• Output Power (max): 2W
• Power Gain (typ)@vds: 15dB
• Frequency (min): 3.4GHz
• Frequency (max): 3.8GHz
• Package Type: NI-400-240
• Pin Count: 3
• Input Capacitance (typ)@vds: 50.6@28VpF
• Output Capacitance (typ)@vds: 68.5@28VpF
• Reverse Capacitance (typ): 0.13@28VpF
• Operating Temp Range: -65C to 225C
• Drain Efficiency (typ): 17%
• Mounting: Screw
• Mode Of Operation: BWA/OFDM/WIBRO/WIMAX
• Number Of Elements: 1
• Vswr (max): 10
• Screening Level: Military
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Noise Figure: -
• Lead Free Status / Rohs Status: Compliant

Application Notes
• AN1955: Thermal Measurement Methodology of RF Power Amplifiers
Engineering Bulletins
• EB212: Using Data Sheet Impedances for RF LDMOS Devices
MRF7S38010HR3 MRF7S38010HSR3
14
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Aug. 2007
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• Initial Release of Data Sheet
PRODUCT DOCUMENTATION
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Description
Freescale Semiconductor
RF Device Data