MRF7S38010HR3 Freescale Semiconductor, MRF7S38010HR3 Datasheet - Page 9

• Manufacturer Part Number: MRF7S38010HR3
• Description: MOSFET RF N-CH 2W 30V NI-400
• Manufacturer: Freescale Semiconductor

Specifications of MRF7S38010HR3

• Transistor Type: N-Channel
• Frequency: 3.4GHz
• Gain: 15dB
• Voltage - Rated: 65V
• Current Rating: 10µA
• Current - Test: 160mA
• Voltage - Test: 30V
• Power - Output: 2W
• Package / Case: NI-400
• Channel Type: N
• Channel Mode: Enhancement
• Drain Source Voltage (max): 65V
• Output Power (max): 2W
• Power Gain (typ)@vds: 15dB
• Frequency (min): 3.4GHz
• Frequency (max): 3.8GHz
• Package Type: NI-400-240
• Pin Count: 3
• Input Capacitance (typ)@vds: 50.6@28VpF
• Output Capacitance (typ)@vds: 68.5@28VpF
• Reverse Capacitance (typ): 0.13@28VpF
• Operating Temp Range: -65C to 225C
• Drain Efficiency (typ): 17%
• Mounting: Screw
• Mode Of Operation: BWA/OFDM/WIBRO/WIMAX
• Number Of Elements: 1
• Vswr (max): 10
• Screening Level: Military
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Noise Figure: -
• Lead Free Status / Rohs Status: Compliant

RF Device Data
Freescale Semiconductor
Figure 15. Series Equivalent Source and Load Impedance
Z
o
= 50 Ω
Input
Matching
Network
Z
Z
source
load
3400
3425
3450
3475
3500
3525
3550
3575
3600
f = 3400 MHz
MHz
f
V
Z
= Test circuit impedance as measured from
= Test circuit impedance as measured
DD
load
= 30 Vdc, I
gate to ground.
from drain to ground.
Z
source
30.03 - j13.46
28.76 - j15.19
27.24 - j16.25
25.51 - j17.02
31.32 - j11.63
31.79 - j0.13
32.46 - j3.62
32.58 - j6.82
32.29 - j9.43
Z
f = 3600 MHz
source
Device
Under
Test
DQ
W
= 160 mA, P
f = 3600 MHz
f = 3400 MHz
Z
out
load
13.92 - j11.33
14.61 - j11.40
15.53 - j11.36
16.44 - j11.28
17.25 - j11.07
18.11 - j10.64
18.96 - j10.22
19.60 - j9.68
20.17 - j8.99
= 2 W Avg.
Z
source
Z
load
W
Output
Matching
Network
MRF7S38010HR3 MRF7S38010HSR3
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