MRF7S15100HR3 Freescale Semiconductor, MRF7S15100HR3 Datasheet

MOSFET RF N-CH 28V 23W NI780

MRF7S15100HR3

Manufacturer Part Number
MRF7S15100HR3
Description
MOSFET RF N-CH 28V 23W NI780
Manufacturer
Freescale Semiconductor
Datasheet

Specifications of MRF7S15100HR3

Transistor Type
N-Channel
Frequency
1.51GHz
Gain
19.5dB
Voltage - Rated
65V
Current Rating
10µA
Current - Test
600mA
Voltage - Test
28V
Power - Output
23W
Package / Case
NI-780
Channel Type
N
Channel Mode
Enhancement
Drain Source Voltage (max)
65V
Output Power (max)
23W
Power Gain (typ)@vds
19.5dB
Frequency (min)
1.47GHz
Frequency (max)
1.51GHz
Package Type
NI-780
Pin Count
3
Input Capacitance (typ)@vds
176@28VpF
Output Capacitance (typ)@vds
300@28VpF
Reverse Capacitance (typ)
0.6@28VpF
Operating Temp Range
-65C to 225C
Drain Efficiency (typ)
32%
Mounting
Screw
Mode Of Operation
1-Carrier W-CDMA
Number Of Elements
1
Vswr (max)
10
Screening Level
Military
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Noise Figure
-
Lead Free Status / Rohs Status
Compliant

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
MRF7S15100HR3
Manufacturer:
FREESCALE
Quantity:
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Part Number:
MRF7S15100HR3
Manufacturer:
FREESCALE
Quantity:
20 000
© Freescale Semiconductor, Inc., 2008-2009. All rights reserved.
RF Device Data
Freescale Semiconductor
RF Power Field Effect Transistors
N - Channel Enhancement - Mode Lateral MOSFETs
1510 MHz. Can be used in Class AB and Class C for all typical cellular base
station modulations.
• Typical Single - Carrier W - CDMA Performance: V
• Capable of Handling 10:1 VSWR, @ 32 Vdc, 1490 MHz, 100 Watts CW
• Typical P
Features
• 100% PAR Tested for Guaranteed Output Power Capability
• Characterized with Series Equivalent Large - Signal Impedance Parameters
• Internally Matched for Ease of Use
• Integrated ESD Protection
• Greater Negative Gate - Source Voltage Range for Improved Class C
• Optimized for Doherty Applications
• RoHS Compliant
• In Tape and Reel. R3 Suffix = 250 Units per 56 mm, 13 inch Reel.
Freescale Semiconductor
Technical Data
Table 1. Maximum Ratings
Table 2. Thermal Characteristics
Drain - Source Voltage
Gate - Source Voltage
Operating Voltage
Storage Temperature Range
Case Operating Temperature
Operating Junction Temperature
CW Operation @ T
Thermal Resistance, Junction to Case
Designed for CDMA base station applications with frequencies from 1470 to
1. Continuous use at maximum temperature will affect MTTF.
2. MTTF calculator available at http://www.freescale.com/rf. Select Software & Tools/Development Tools/Calculators to access MTTF
3. Refer to AN1955, Thermal Measurement Methodology of RF Power Amplifiers. Go to http://www.freescale.com/rf.
600 mA, P
Channel Bandwidth = 3.84 MHz, Input Signal PAR = 7.5 dB @ 0.01%
Probability on CCDF.
Output Power
Operation
Derate above 25°C
Case Temperature 80°C, 55 W CW
Case Temperature 77°C, 23 W CW
Power Gain — 19.5 dB
Drain Efficiency — 32%
Device Output Signal PAR — 6.2 dB @ 0.01% Probability on CCDF
ACPR @ 5 MHz Offset — - 38 dBc in 3.84 MHz Channel Bandwidth
calculators by product.
Select Documentation/Application Notes - AN1955.
out
out
@ 1 dB Compression Point ' 100 Watts CW
= 23 Watts Avg., f = 1507.5 MHz, IQ Magnitude Clipping,
A
= 25°C
(1,2)
Characteristic
Rating
DD
= 28 Volts, I
DQ
=
Symbol
Symbol
V
R
V
V
CW
T
T
DSS
T
θJC
GS
DD
stg
C
J
Document Number: MRF7S15100H
CASE 465 - 06, STYLE 1
CASE 465A - 06, STYLE 1
MRF7S15100HR3 MRF7S15100HSR3
1470 - 1510 MHz, 23 W AVG., 28 V
MRF7S15100HSR3
MRF7S15100HR3
MRF7S1500HR3
MRF7S1500HSR3
LATERAL N - CHANNEL
RF POWER MOSFETs
NI - 780
NI - 780S
SINGLE W - CDMA
- 65 to +150
Value
- 0.5, +65
- 6.0, +10
32, +0
Value
0.36
0.65
0.74
150
225
75
(2,3)
Rev. 2, 6/2009
W/°C
°C/W
Unit
Unit
Vdc
Vdc
Vdc
°C
°C
°C
W
1

Related parts for MRF7S15100HR3

MRF7S15100HR3 Summary of contents

Page 1

... MHz AVG CASE 465 - 06, STYLE 1 MRF7S1500HR3 CASE 465A - 06, STYLE 1 MRF7S1500HSR3 Symbol V DSS stg Symbol R θJC MRF7S15100HR3 MRF7S15100HSR3 Rev. 2, 6/2009 SINGLE W - CDMA LATERAL N - CHANNEL RF POWER MOSFETs NI - 780 NI - 780S Value Unit - 0.5, +65 Vdc - 6.0, +10 Vdc 32, +0 Vdc - 65 to +150 °C 150 °C 225 ° ...

Page 2

... W - CDMA, IQ Magnitude Clipping, Input Signal PAR = 7 0.01% Probability on CCDF. ACPR measured in 3.84 MHz Channel Bandwidth @ ±5 MHz Offset. Power Gain Drain Efficiency Output Peak - to - Average Ratio @ 0.01% Probability on CCDF Adjacent Channel Power Ratio Input Return Loss 1. Part internally matched both on input and output. MRF7S15100HR3 MRF7S15100HSR3 2 = 25°C unless otherwise noted) A Symbol I DSS I ...

Page 3

... Min Typ Max = 600 mA, 1470 - 1510 MHz Bandwidth — 100 — — 40 — — 70 — — 0.2 — — 4.5 — — 1.9 — — 23 — — 0.010 — — 0.007 — MRF7S15100HR3 MRF7S15100HSR3 Unit W MHz MHz dB ° ns ° dB/°C W/°C 3 ...

Page 4

... Z12 1.288″ x 0.144″ Microstrip Z13 1.288″ x 0.369″ Microstrip Z14 1.330″ x 0.112″ Microstrip Figure 1. MRF7S15100HR3(HSR3) Test Circuit Schematic Table 5. MRF7S15100HR3(HSR3) Test Circuit Component Designations and Values Part B1 Short Ferrite Bead C1, C6, C7 Chip Capacitors C2 0.5 pF Chip Capacitor ...

Page 5

... MRF7S15100H/HS Rev. 3 Figure 2. MRF7S15100HR3(HSR3) Test Circuit Component Layout RF Device Data Freescale Semiconductor C11 C9 C10 C6 C12 C13 C7 MRF7S15100HR3 MRF7S15100HSR3 5 ...

Page 6

... OUTPUT POWER (WATTS) CW out Figure 4. CW Power Gain versus Output Power −1 18 −2 17 −3 16 −4 15 −5 15 MRF7S15100HR3 MRF7S15100HSR3 6 TYPICAL CHARACTERISTICS Vdc (Avg.) DD out I = 600 mA, Single−Carrier W−CDMA DQ 3.84 MHz Channel Bandwidth, Input Signal PAR = 7 0.01% Probability on CCDF PARC IRL 1425 1450 1475 ...

Page 7

... MTTF calculator available at http://www.freescale.com/rf. Select Software & Tools/Development Tools/Calculators to access MTTF calculators by product. Figure 9. MTTF versus Junction Temperature 90 −18 25_C 75 −25 −30_C 25_C 60 −32 85_C − −46 15 −53 0 −60 100 200 0 −5 −10 −15 −20 −25 2250 230 250 = 32%. D MRF7S15100HR3 MRF7S15100HSR3 7 ...

Page 8

... Channel Bandwidth @ ±5 MHz Offset. 0.001 Input Signal PAR = 7 0.01% Probability on CCDF 0.0001 PEAK−TO−AVERAGE (dB) Figure 10. CCDF W - CDMA IQ Magnitude Clipping, Single - Carrier Test Signal MRF7S15100HR3 MRF7S15100HSR3 CDMA TEST SIGNAL 10 0 −10 −20 −30 −40 −50 −60 −ACPR in 3.84 MHz Integrated BW −70 − ...

Page 9

... Z = Test circuit impedance as measured from source gate to ground Test circuit impedance as measured load from drain to ground. Device Input Under Matching Test Network Z Z source load Output Matching Network MRF7S15100HR3 MRF7S15100HSR3 9 ...

Page 10

... ALTERNATIVE PEAK TUNE LOAD PULL CHARACTERISTICS NOTE: Load Pull Test Fixture Tuned for Peak P1dB Output Power @ 28 V MRF7S15100HR3 MRF7S15100HSR3 10 Ideal P3dB = 51.63 dBm (146 W) P1dB = 50.95 dBm (125 Vdc 600 mA, Pulsed μsec(on), 10% Duty Cycle 1500 MHz INPUT POWER (dBm) in Test Impedances per Compression Level ...

Page 11

... REF 0.127 REF F bbb 0.010 REF 0.254 REF ccc 0.015 REF 0.381 REF STYLE 1: PIN 1. DRAIN 2. GATE 5. SOURCE MRF7S15100HR3 MRF7S15100HSR3 MAX 34.16 9.91 4.32 12.83 1.14 0.15 1.70 5.33 19.96 20.00 3.51 9.53 9.52 11 ...

Page 12

... Fig. 10, CCDF W - CDMA IQ Magnitude Clipping, Single - Carrier Test Signal and Fig. 11, Single - Carrier W - CDMA Spectrum updated to show the undistorted input test signal • Added Electromigration MTTF Calculator and RF High Power Model availability to Product Documentation, Tools and Software MRF7S15100HR3 MRF7S15100HSR3 12 REVISION HISTORY Description ...

Page 13

... Freescale Semiconductor was negligent regarding the design or manufacture of the part. Freescalet and the Freescale logo are trademarks of Freescale Semiconductor, Inc. All other product or service names are the property of their respective owners. © Freescale Semiconductor, Inc. 2008-2009. All rights reserved. MRF7S15100HR3 MRF7S15100HSR3 13 ...

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