MRF7S15100HR3 Freescale Semiconductor, MRF7S15100HR3 Datasheet - Page 7

MOSFET RF N-CH 28V 23W NI780

MRF7S15100HR3

Manufacturer Part Number
MRF7S15100HR3
Description
MOSFET RF N-CH 28V 23W NI780
Manufacturer
Freescale Semiconductor
Datasheet

Specifications of MRF7S15100HR3

Transistor Type
N-Channel
Frequency
1.51GHz
Gain
19.5dB
Voltage - Rated
65V
Current Rating
10µA
Current - Test
600mA
Voltage - Test
28V
Power - Output
23W
Package / Case
NI-780
Channel Type
N
Channel Mode
Enhancement
Drain Source Voltage (max)
65V
Output Power (max)
23W
Power Gain (typ)@vds
19.5dB
Frequency (min)
1.47GHz
Frequency (max)
1.51GHz
Package Type
NI-780
Pin Count
3
Input Capacitance (typ)@vds
176@28VpF
Output Capacitance (typ)@vds
300@28VpF
Reverse Capacitance (typ)
0.6@28VpF
Operating Temp Range
-65C to 225C
Drain Efficiency (typ)
32%
Mounting
Screw
Mode Of Operation
1-Carrier W-CDMA
Number Of Elements
1
Vswr (max)
10
Screening Level
Military
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Noise Figure
-
Lead Free Status / Rohs Status
Compliant

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
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Manufacturer:
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Quantity:
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RF Device Data
Freescale Semiconductor
10
10
10
10
10
22
20
18
16
14
12
10
Figure 7. Single - Carrier W - CDMA Power Gain, Drain
25
20
15
10
1150
5
0
9
8
7
6
5
90
1
V
Single−Carrier W−CDMA, 3.84 MHz
Channel Bandwidth
This above graph displays calculated MTTF in hours when the device
is operated at V
MTTF calculator available at http://www.freescale.com/rf. Select
Software & Tools/Development Tools/Calculators to access MTTF
calculators by product.
Figure 9. MTTF versus Junction Temperature
G
DD
Efficiency and ACPR versus Output Power
1250
ps
ACPR
Figure 8. Broadband Frequency Response
T
= 28 Vdc, I
C
110
= −30_C
1350 1450 1550 1650 1750 1850
TYPICAL CHARACTERISTICS
η
D
P
130
T
DQ
out
J
DD
, JUNCTION TEMPERATURE (°C)
, OUTPUT POWER (WATTS) AVG.
= 600 mA, f = 1490 MHz
= 28 Vdc, P
S11
25_C
f, FREQUENCY (MHz)
150
10
Input Signal PAR = 7.5 dB @ 0.01%
Probability on CCDF
85_C
out
170
= 23 W Avg., and η
V
I
DQ
190
DD
= 600 mA
= 28 Vdc
1950 2050 2150
210
85_C
S21
D
25_C
= 32%.
100
230
−30_C
85_C
25_C
200
2250
MRF7S15100HR3 MRF7S15100HSR3
250
90
75
60
45
30
15
0
0
−5
−10
−15
−20
−25
−18
−25
−32
−39
−46
−53
−60
7

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