MRF7S15100HR3 Freescale Semiconductor, MRF7S15100HR3 Datasheet - Page 6

• Manufacturer Part Number: MRF7S15100HR3
• Description: MOSFET RF N-CH 28V 23W NI780
• Manufacturer: Freescale Semiconductor

Specifications of MRF7S15100HR3

• Transistor Type: N-Channel
• Frequency: 1.51GHz
• Gain: 19.5dB
• Voltage - Rated: 65V
• Current Rating: 10µA
• Current - Test: 600mA
• Voltage - Test: 28V
• Power - Output: 23W
• Package / Case: NI-780
• Channel Type: N
• Channel Mode: Enhancement
• Drain Source Voltage (max): 65V
• Output Power (max): 23W
• Power Gain (typ)@vds: 19.5dB
• Frequency (min): 1.47GHz
• Frequency (max): 1.51GHz
• Package Type: NI-780
• Pin Count: 3
• Input Capacitance (typ)@vds: 176@28VpF
• Output Capacitance (typ)@vds: 300@28VpF
• Reverse Capacitance (typ): 0.6@28VpF
• Operating Temp Range: -65C to 225C
• Drain Efficiency (typ): 32%
• Mounting: Screw
• Mode Of Operation: 1-Carrier W-CDMA
• Number Of Elements: 1
• Vswr (max): 10
• Screening Level: Military
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Noise Figure: -
• Lead Free Status / Rohs Status: Compliant

MRF7S15100HR3 MRF7S15100HSR3
6
20
19
18
17
16
1
Figure 4. CW Power Gain versus Output Power
750 mA
600 mA
450 mA
300 mA
P
out
I
DQ
, OUTPUT POWER (WATTS) CW
= 900 mA
21
20
19
18
17
16
15
V
CW Measurements
DD
10
Figure 3. Output Peak - to - Average Ratio Compression (PARC)
= 28 Vdc, f = 1490 MHz
20
19
18
17
16
15
14
13
12
11
10
1400
−1
−2
−3
−4
−5
Broadband Performance @ P
1
0
15
V
I
3.84 MHz Channel Bandwidth, Input Signal
PAR = 7.5 dB @ 0.01% Probability on CCDF
DQ
−1 dB = 24.14 W
−2 dB = 32.65 W
DD
1425
V
W−CDMA, 3.84 MHz Channel Bandwidth, Input Signal
PAR = 7.5 dB @ 0.01% Probability on CCDF
Compression (PARC) versus Output Power
= 600 mA, Single−Carrier W−CDMA
= 28 Vdc, P
DD
Figure 6. Output Peak - to - Average Ratio
= 28 Vdc, I
TYPICAL CHARACTERISTICS
1450
25
100
out
PARC
P
IRL
DQ
out
= 23 W (Avg.)
1475
f, FREQUENCY (MHz)
, OUTPUT POWER (WATTS)
= 600 mA, f = 1490 MHz, Single−Carrier
200
−3 dB = 43.29 W
35
1500
1525
out
−10
−20
−30
−40
−50
−60
−70
45
= 23 Watts Avg.
1
1550
Figure 5. Intermodulation Distortion Products
V
Two−Tone Measurements
(f1 + f2)/2 = Center Frequency of 1490 MHz
DD
= 28 Vdc, P
55
1575
ACPR
ACPR
IM3−U
IM7−U
PARC
IM7−L
IM3−L
G
η
ps
D
1600
out
G
versus Tone Spacing
TWO−TONE SPACING (MHz)
η
ps
D
= 90 W (PEP), I
35
34
33
32
31
−36
−37
−38
−39
−40
−41
65
55
50
45
40
35
30
25
10
IM5−L
IM5−U
−5
−10
−15
−20
−25
−30
DQ
Freescale Semiconductor
−15
−20
−25
−30
−35
−40
−45
= 600 mA
RF Device Data
−0.8
−0.9
−1
−1.1
−1.2
−0.7
100