MRF6S23140HSR3 Freescale Semiconductor, MRF6S23140HSR3 Datasheet

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MRF6S23140HSR3

Manufacturer Part Number
MRF6S23140HSR3
Description
MOSFET RF N-CHAN 28W 28W NI-880S
Manufacturer
Freescale Semiconductor
Datasheet

Specifications of MRF6S23140HSR3

Transistor Type
N-Channel
Frequency
2.39GHz
Gain
15.2dB
Voltage - Rated
68V
Current Rating
10µA
Current - Test
1.3A
Voltage - Test
28V
Power - Output
28W
Package / Case
NI-880S
Channel Type
N
Channel Mode
Enhancement
Drain Source Voltage (max)
68V
Output Power (max)
28W
Power Gain (typ)@vds
15.2dB
Frequency (min)
2.3GHz
Frequency (max)
2.4GHz
Package Type
NI-880S
Pin Count
3
Reverse Capacitance (typ)
2@28VpF
Operating Temp Range
-65C to 200C
Drain Efficiency (typ)
25%
Mounting
Surface Mount
Mode Of Operation
2-Carrier W-CDMA
Number Of Elements
1
Vswr (max)
10
Screening Level
Military
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Noise Figure
-
Lead Free Status / Rohs Status
Compliant
RF Device Data
Freescale Semiconductor
RF Power Field Effect Transistors
N - Channel Enhancement - Mode Lateral MOSFETs
2400 MHz. Suitable for WiMAX, WiBro and multicarrier amplifier applications.
To be used in Class AB and Class C WLL applications.
Features
Freescale Semiconductor
Technical Data
Table 1. Maximum Ratings
Table 2. Thermal Characteristics
Table 3. ESD Protection Characteristics
Freescale Semiconductor, Inc., 2006, 2008. All rights reserved.
Drain - Source Voltage
Gate - Source Voltage
Storage Temperature Range
Case Operating Temperature
Operating Junction Temperature
Thermal Resistance, Junction to Case
Human Body Model (per JESD22 - A114)
Machine Model (per EIA/JESD22 - A115)
Charge Device Model (per JESD22 - C101)
Designed for CDMA base station applications with frequencies from 2300 to
1. Continuous use at maximum temperature will affect MTTF.
2. MTTF calculator available at http://www.freescale.com/rf. Select Software & Tools/Development Tools/Calculators to access
3. Refer to AN1955, Thermal Measurement Methodology of RF Power Amplifiers. Go to http://www.freescale.com/rf.
Typical 2 - Carrier W - CDMA Performance: V
P
PAR = 8.5 dB @ 0.01% Probability on CCDF.
Capable of Handling 10:1 VSWR, @ 32 Vdc, 2390 MHz, 140 Watts CW
Output Power
Characterized with Series Equivalent Large - Signal Impedance Parameters
Internally Matched for Ease of Use
Qualified Up to a Maximum of 32 V
Integrated ESD Protection
Designed for Lower Memory Effects and Wide Instantaneous Bandwidth
Applications
RoHS Compliant
In Tape and Reel. R3 Suffix = 250 Units per 56 mm, 13 inch Reel.
Case Temperature 82 C, 140 W CW
Case Temperature 75 C, 28 W CW
out
Power Gain — 15.2 dB
Drain Efficiency — 25%
IM3 @ 10 MHz Offset — - 37 dBc in 3.84 MHz Channel Bandwidth
ACPR @ 5 MHz Offset — - 40 dBc in 3.84 MHz Channel Bandwidth
MTTF calculators by product.
Select Documentation/Application Notes - AN1955.
= 28 Watts Avg., f = 2390 MHz, Channel Bandwidth = 3.84 MHz,
Test Methodology
(1,2)
Characteristic
Rating
DD
Operation
DD
= 28 Volts, I
DQ
= 1300 mA,
Symbol
Symbol
V
R
V
T
T
DSS
T
GS
stg
C
JC
J
Document Number: MRF6S23140H
CASE 465B - 03, STYLE 1
CASE 465C - 02, STYLE 1
MRF6S23140HR3 MRF6S23140HSR3
2300 - 2400 MHz, 28 W AVG., 28 V
MRF6S23140HSR3
MRF6S23140HR3
MRF6S23140HSR3
MRF6S23140HR3
LATERAL N - CHANNEL
RF POWER MOSFETs
NI - 880S
NI - 880
IV (Minimum)
A (Minimum)
2 (Minimum)
- 65 to +150
Value
2 x W - CDMA
- 0.5, +68
- 0.5, +12
Value
Class
0.29
0.33
150
225
(2,3)
Rev. 2, 12/2008
Unit
Unit
Vdc
Vdc
C/W
C
C
C
1

Related parts for MRF6S23140HSR3

MRF6S23140HSR3 Summary of contents

Page 1

... W - CDMA LATERAL N - CHANNEL RF POWER MOSFETs CASE 465B - 03, STYLE 880 MRF6S23140HR3 CASE 465C - 02, STYLE 880S MRF6S23140HSR3 Symbol Value Unit V - 0.5, +68 Vdc DSS V - 0.5, +12 Vdc +150 stg T 150 C T 225 J (2,3) Symbol Value Unit R C/W JC 0.29 0.33 Class 2 (Minimum) A (Minimum) IV (Minimum) MRF6S23140HR3 MRF6S23140HSR3 ...

Page 2

... W - CDMA, 3.84 MHz Channel Bandwidth Carriers. ACPR measured in 3.84 MHz Channel Bandwidth @ 5 MHz Offset. IM3 measured in 3.84 MHz Bandwidth @ 10 MHz Offset. PAR = 8 0.01% Probability on CCDF. Power Gain Drain Efficiency Intermodulation Distortion Adjacent Channel Power Ratio Input Return Loss 1. Part internally matched both on input and output. MRF6S23140HR3 MRF6S23140HSR3 unless otherwise noted) C Symbol I DSS I ...

Page 3

... Microstrip 0.250 x 0.110 Microstrip 0.539 x 0.068 Microstrip 0.956 x 0.068 Microstrip Taconic RF - 35, 0.030 , = 3.5 r Part Number Manufacturer 2743019447 Fair - Rite ATC100B5R6CT500XT ATC C1825C103J1RAC Kemet C1825C225J5RAC Kemet T491D226K025AT Kemet T491D476K016AT Kemet GRM55DR61H106KA88B Murata EMVY630GTR331MMH0S Chemi - Con CRCW120610R0FKEA Vishay MRF6S23140HR3 MRF6S23140HSR3 RF 3 ...

Page 4

... R1 C12 C11 C10* C1 C16 C15 C14* * Stacked Figure 2. MRF6S23140HR3(SR3) Test Circuit Component Layout MRF6S23140HR3 MRF6S23140HSR3 C9 C13* C19 C5 C20 C17 C18 C2 MRF6S23140H Rev 3 C21 C22 C24 C7 C23 RF Device Data Freescale Semiconductor ...

Page 5

... Watts Avg. out −25 −6 −9 −27 −29 −12 ACPR −31 −15 −33 −18 2410 2430 = 56 Watts Avg. out = 28 Vdc 650 mA DQ 1950 mA 1625 mA 1300 mA 975 mA 10 100 P , OUTPUT POWER (WATTS) PEP out versus Output Power MRF6S23140HR3 MRF6S23140HSR3 300 5 ...

Page 6

... W−CDMA, 10 MHz Carrier Spacing, 3.84 MHz Channel 30 Bandwidth, PAR = 8 0.01% Probability (CCDF 0.5 Figure Carrier W - CDMA ACPR, IM3, Power Gain MRF6S23140HR3 MRF6S23140HSR3 6 TYPICAL CHARACTERISTICS = 28 Vdc 140 W (PEP) DD out = 1300 mA, Two−Tone Measurements DQ 3rd Order 5th Order 7th Order 1 10 TWO− ...

Page 7

... This above graph displays calculated MTTF in hours when the device is operated Vdc Avg., and DD out MTTF calculator available at http://www.freescale.com/rf. Select Software & Tools/Development Tools/Calculators to access MTTF calculators by product 1300 2350 MHz 100 150 200 P , OUTPUT POWER (WATTS) CW out 210 230 250 = 25%. D MRF6S23140HR3 MRF6S23140HSR3 32 V 250 7 ...

Page 8

... Bandwidth @ 5 MHz Offset. IM3 Measured in 0.01 3.84 MHz Bandwidth @ 10 MHz Offset. PAR = 8 0.01% Probability on CCDF 0.001 0.0001 PEAK−TO−AVERAGE (dB) Figure 13. CCDF W - CDMA 3GPP, Test Model 1, 64 DPCH, 67% Clipping, Single - Carrier Test Signal MRF6S23140HR3 MRF6S23140HSR3 CDMA TEST SIGNAL +20 +30 0 −10 −20 −30 −40 −50 −60 − ...

Page 9

... Z = Test circuit impedance as measured from source gate to ground Test circuit impedance as measured load from drain to ground. Device Input Under Matching Network Test Z Z source load load W Output Matching Network MRF6S23140HR3 MRF6S23140HSR3 9 ...

Page 10

... D bbb bbb ccc (FLANGE (FLANGE bbb (INSULATOR) bbb (LID) ccc (FLANGE) MRF6S23140HR3 MRF6S23140HSR3 10 PACKAGE DIMENSIONS Q 2X bbb (INSULATOR) M ccc (LID) M aaa SEATING T PLANE CASE 465B - 03 ISSUE 880 MRF6S23140HR3 R (LID) ccc (INSULATOR) aaa SEATING PLANE CASE 465C - 02 ISSUE 880S MRF6S23140HSR3 NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M− ...

Page 11

... Replaced Fig. 12, MTTF versus Junction Temperature with updated graph. Removed Amps operating characteristics and location of MTTF calculator for device Added Product Documentation and Revision History Device Data Freescale Semiconductor PRODUCT DOCUMENTATION REVISION HISTORY Description the RF test condition voltage callout for and added “Measured in GS(Q) 2 and listed MRF6S23140HR3 MRF6S23140HSR3 11 ...

Page 12

... P.O. Box 5405 Denver, Colorado 80217 1 - 800 - 441 - 2447 303 - 675 - 2140 Fax 303 - 675 - 2150 LDCForFreescaleSemiconductor@hibbertgroup.com MRF6S23140HR3 MRF6S23140HSR3 Document Number: MRF6S23140H Rev. 2, 12/2008 12 Information in this document is provided solely to enable system and software implementers to use Freescale Semiconductor products. There are no express or implied copyright licenses granted hereunder to design or fabricate any integrated circuits or integrated circuits based on the information in this document ...

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