MRF6S23140HSR3 Freescale Semiconductor, MRF6S23140HSR3 Datasheet - Page 4

• Manufacturer Part Number: MRF6S23140HSR3
• Description: MOSFET RF N-CHAN 28W 28W NI-880S
• Manufacturer: Freescale Semiconductor

Specifications of MRF6S23140HSR3

• Transistor Type: N-Channel
• Frequency: 2.39GHz
• Gain: 15.2dB
• Voltage - Rated: 68V
• Current Rating: 10µA
• Current - Test: 1.3A
• Voltage - Test: 28V
• Power - Output: 28W
• Package / Case: NI-880S
• Channel Type: N
• Channel Mode: Enhancement
• Drain Source Voltage (max): 68V
• Output Power (max): 28W
• Power Gain (typ)@vds: 15.2dB
• Frequency (min): 2.3GHz
• Frequency (max): 2.4GHz
• Package Type: NI-880S
• Pin Count: 3
• Reverse Capacitance (typ): 2@28VpF
• Operating Temp Range: -65C to 200C
• Drain Efficiency (typ): 25%
• Mounting: Surface Mount
• Mode Of Operation: 2-Carrier W-CDMA
• Number Of Elements: 1
• Vswr (max): 10
• Screening Level: Military
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Noise Figure: -
• Lead Free Status / Rohs Status: Compliant

MRF6S23140HR3 MRF6S23140HSR3
4
* Stacked
R1
C1
C15
C16
Figure 2. MRF6S23140HR3(SR3) Test Circuit Component Layout
C12 C11
C14*
C10*
C13*
C9*
C4
B2
B1
C3
C6
C8
C5
C7
C21
C17
C19
C23
C22
C18
C2
MRF6S23140H
Rev 3
Freescale Semiconductor
C20
C24
RF Device Data