MRF6S23140HSR3 Freescale Semiconductor, MRF6S23140HSR3 Datasheet - Page 6

• Manufacturer Part Number: MRF6S23140HSR3
• Description: MOSFET RF N-CHAN 28W 28W NI-880S
• Manufacturer: Freescale Semiconductor

Specifications of MRF6S23140HSR3

• Transistor Type: N-Channel
• Frequency: 2.39GHz
• Gain: 15.2dB
• Voltage - Rated: 68V
• Current Rating: 10µA
• Current - Test: 1.3A
• Voltage - Test: 28V
• Power - Output: 28W
• Package / Case: NI-880S
• Channel Type: N
• Channel Mode: Enhancement
• Drain Source Voltage (max): 68V
• Output Power (max): 28W
• Power Gain (typ)@vds: 15.2dB
• Frequency (min): 2.3GHz
• Frequency (max): 2.4GHz
• Package Type: NI-880S
• Pin Count: 3
• Reverse Capacitance (typ): 2@28VpF
• Operating Temp Range: -65C to 200C
• Drain Efficiency (typ): 25%
• Mounting: Surface Mount
• Mode Of Operation: 2-Carrier W-CDMA
• Number Of Elements: 1
• Vswr (max): 10
• Screening Level: Military
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Noise Figure: -
• Lead Free Status / Rohs Status: Compliant

MRF6S23140HR3 MRF6S23140HSR3
6
−10
−20
−30
−40
−50
−60
59
57
55
53
51
49
47
45
42
36
30
24
18
12
Figure 9. 2 - Carrier W - CDMA ACPR, IM3, Power Gain
0
6
0
0.1
0.5
29
Figure 7. Intermodulation Distortion Products
V
I
(f1 + f2)/2 = Center Frequency of 2350 MHz
V
f1 = 2345 MHz, f2 = 2355 MHz
2−Carrier W−CDMA, 10 MHz
Carrier Spacing, 3.84 MHz Channel
Bandwidth, PAR = 8.5 dB @ 0.01%
Probability (CCDF)
DQ
DD
DD
Figure 8. Pulsed CW Output Power versus
and Drain Efficiency versus Output Power
3rd Order
5th Order
7th Order
= 1300 mA, Two−Tone Measurements
1
= 28 Vdc, P
= 28 Vdc, I
P1dB = 52.22 dBm (162.72 W)
31
T
IM3
C
TYPICAL CHARACTERISTICS
= − 30_C
P
P3dB = 53.04 dBm (201.42 W)
out
33
DQ
out
versus Tone Spacing
, OUTPUT POWER (WATTS) AVG.
TWO−TONE SPACING (MHz)
= 1300 mA
P
= 140 W (PEP)
1
P6dB = 53.51 dBm (224.39 W)
in
, INPUT POWER (dBm)
G
Input Power
ps
35
V
Pulsed CW, 8 sec(on), 1 msec(off)
f = 2350 MHz
10
DD
ACPR
= 28 Vdc, I
37
D
−30_C
10
39
DQ
85_C
= 1300 mA
41
25_C
100
25_C
85_C
Ideal
−30_C
−30_C
25_C
85_C
Actual
43
100
300
−20
−25
−30
−35
−40
−45
−50
−55
Freescale Semiconductor
RF Device Data