BF 1009S E6327 Infineon Technologies, BF 1009S E6327 Datasheet - Page 3

• Manufacturer Part Number: BF 1009S E6327
• Description: MOSFET N-CH 12V 25MA SOT-143
• Manufacturer: Infineon Technologies

Specifications of BF 1009S E6327

• Package / Case: SOT-143, SOT-143B, TO-253AA
• Transistor Type: N-Channel
• Frequency: 800MHz
• Gain: 22dB
• Voltage - Rated: 12V
• Current Rating: 25mA
• Noise Figure: 1.4dB
• Voltage - Test: 9V
• Configuration: Single Dual Gate
• Transistor Polarity: N-Channel
• Drain-source Breakdown Voltage: 12 V
• Gate-source Breakdown Voltage: 8 V, 10 V
• Continuous Drain Current: 0.025 A
• Power Dissipation: 200 mW
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Power - Output: -
• Current - Test: -
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant
• Other names: BF1009SE6327XT; SP000010955

Electrical Characteristics at T
Parameter
AC Characteristics
Forward transconductance
V
Gate1 input capacitance
V
Output capacitance
V
Power gain (self biased)
V
Noise figure
V
Gain control range
V
DS
DS
DS
DS
DS
DS
= 9 V, V
= 9 V, V
= 9 V, V
= 9 V, V
= 9 V, V
= 9 V, V
G2S
G2S
G2S
G2S
G2S
G2S
= 6 V
= 6 V, f = 10 MHz
= 6 V, f = 10 MHz
= 6 V, f = 800 MHz
= 6 V, f = 800 MHz
= 6 ... 0 V, f = 800 MHz
(verified by random sampling)
A
= 25°C, unless otherwise specified
3
Symbol
g
C
C
G
F
fs
G
g1ss
dss
p
p
min.
26
18
40
-
-
-
Values
typ.
2.1
0.9
1.4
30
22
50
BF1009S...
max.
2.7
2.1
2007-04-20
-
-
-
-
Unit
mS
pF
dB
dB