BF 1009S E6327 Infineon Technologies, BF 1009S E6327 Datasheet - Page 4

• Manufacturer Part Number: BF 1009S E6327
• Description: MOSFET N-CH 12V 25MA SOT-143
• Manufacturer: Infineon Technologies

Specifications of BF 1009S E6327

• Package / Case: SOT-143, SOT-143B, TO-253AA
• Transistor Type: N-Channel
• Frequency: 800MHz
• Gain: 22dB
• Voltage - Rated: 12V
• Current Rating: 25mA
• Noise Figure: 1.4dB
• Voltage - Test: 9V
• Configuration: Single Dual Gate
• Transistor Polarity: N-Channel
• Drain-source Breakdown Voltage: 12 V
• Gate-source Breakdown Voltage: 8 V, 10 V
• Continuous Drain Current: 0.025 A
• Power Dissipation: 200 mW
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Power - Output: -
• Current - Test: -
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant
• Other names: BF1009SE6327XT; SP000010955

Total power dissipation P
BF1009S, BF1009SR
Insertion power gain
|S
21
mW
|² =
dB
220
180
160
140
120
100
-15
-25
-35
-45
-55
-65
80
60
40
20
15
-5
0
0
0
15
(V
G2S
1
30
), f = 200 MHz
45
2
60
75
3
90 105 120 °C
tot
4
= (T
V
S
)
T
V
S
G2S
150
6
4
Drain current I
V
Forward transfer admittance
|Y
DS
21
mA
mS
| =
= 9 V
14
12
11
10
32
24
20
16
12
9
8
7
6
5
4
3
2
1
0
8
4
0
0
0
(V
G2S
1
1
), f = 200 MHz
D
=
2
2
(V
G2S
3
3
)
4
4
BF1009S...
2007-04-20
V
V
V
V
G2S
G2S
6
6