BLF177C,112 NXP Semiconductors, BLF177C,112 Datasheet - Page 14

• Manufacturer Part Number: BLF177C,112
• Description: TRANSISTOR RF DMOS SOT121B
• Manufacturer: NXP Semiconductors

Specifications of BLF177C,112

• Package / Case: SOT-121B
• Transistor Type: N-Channel
• Frequency: 108MHz
• Gain: 19dB
• Voltage - Rated: 125V
• Current Rating: 16A
• Voltage - Test: 50V
• Power - Output: 150W
• Minimum Operating Temperature: - 65 C
• Mounting Style: Screw
• Resistance Drain-source Rds (on): 0.3 Ohms
• Transistor Polarity: N-Channel
• Configuration: Single Dual Source
• Drain-source Breakdown Voltage: 125 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 16 A
• Power Dissipation: 220 W
• Maximum Operating Temperature: + 200 C
• Application: HF/VHF
• Channel Type: N
• Channel Mode: Enhancement
• Drain Source Voltage (max): 125V
• Output Power (max): 150W
• Power Gain (typ)@vds: 20(Min)@50V/19@50VdB
• Frequency (min): 28MHz
• Frequency (max): 108MHz
• Package Type: CRFM
• Pin Count: 4
• Forward Transconductance (typ): 6.2S
• Drain Source Resistance (max): 300@10Vmohm
• Input Capacitance (typ)@vds: 480@50VpF
• Output Capacitance (typ)@vds: 190@50VpF
• Reverse Capacitance (typ): 14@50VpF
• Operating Temp Range: -65C to 200C
• Drain Efficiency (typ): 70%
• Mounting: Screw
• Mode Of Operation: CW Class-B/SSB Class-AB
• Number Of Elements: 1
• Power Dissipation (max): 220000mW
• Vswr (max): 50
• Screening Level: Military
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Noise Figure: -
• Current - Test: -
• Lead Free Status / Rohs Status: Compliant
• Other names: 934058716112; BLF177C; BLF177C

NXP Semiconductors
handbook, full pagewidth
HF/VHF power MOS transistor
Dimensions in mm.
The circuit and components are situated on one side of the PTFE fibre-glass board, the other side being fully metallized to serve as a ground.
Earth connections are made by means of hollow rivets, whilst under the source leads and at the input and output copper straps are used for a
direct contact between upper and lower sheets.
strap
C1
C2
C3
Fig.20 Component layout for 108 MHz class-B test circuit.
L1
C4
C5
L2
R1
R3
Rev. 06 - 24 January 2007
C8
R4
R2
L3
C6
C7
174
strap
C9
L4
C10
L5
C11
L7
rivet
R5
R6
L6
C13
C14
C12
V D
L8
C19
C15
C16
Product specification
C18
strap
MGP105
C17
BLF177
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