BLF177C,112 NXP Semiconductors, BLF177C,112 Datasheet - Page 5

• Manufacturer Part Number: BLF177C,112
• Description: TRANSISTOR RF DMOS SOT121B
• Manufacturer: NXP Semiconductors

Specifications of BLF177C,112

• Package / Case: SOT-121B
• Transistor Type: N-Channel
• Frequency: 108MHz
• Gain: 19dB
• Voltage - Rated: 125V
• Current Rating: 16A
• Voltage - Test: 50V
• Power - Output: 150W
• Minimum Operating Temperature: - 65 C
• Mounting Style: Screw
• Resistance Drain-source Rds (on): 0.3 Ohms
• Transistor Polarity: N-Channel
• Configuration: Single Dual Source
• Drain-source Breakdown Voltage: 125 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 16 A
• Power Dissipation: 220 W
• Maximum Operating Temperature: + 200 C
• Application: HF/VHF
• Channel Type: N
• Channel Mode: Enhancement
• Drain Source Voltage (max): 125V
• Output Power (max): 150W
• Power Gain (typ)@vds: 20(Min)@50V/19@50VdB
• Frequency (min): 28MHz
• Frequency (max): 108MHz
• Package Type: CRFM
• Pin Count: 4
• Forward Transconductance (typ): 6.2S
• Drain Source Resistance (max): 300@10Vmohm
• Input Capacitance (typ)@vds: 480@50VpF
• Output Capacitance (typ)@vds: 190@50VpF
• Reverse Capacitance (typ): 14@50VpF
• Operating Temp Range: -65C to 200C
• Drain Efficiency (typ): 70%
• Mounting: Screw
• Mode Of Operation: CW Class-B/SSB Class-AB
• Number Of Elements: 1
• Power Dissipation (max): 220000mW
• Vswr (max): 50
• Screening Level: Military
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Noise Figure: -
• Current - Test: -
• Lead Free Status / Rohs Status: Compliant
• Other names: 934058716112; BLF177C; BLF177C

NXP Semiconductors
handbook, halfpage
handbook, halfpage
HF/VHF power MOS transistor
R DSon
V
Fig.4
(m )
I
Fig.6
(mV/K)
D
DS
T.C.
= 5 A; V
400
300
200
100
= 10 V; valid for T
0
1
2
3
4
5
10
0
Temperature coefficient of gate-source
voltage as a function of drain current; typical
values.
Drain-source on-state resistance as a
function of junction temperature; typical
values.
2
GS
= 10 V.
h
10
= 25 to 70 C.
50
1
100
1
T j ( C)
I D (A)
MGP092
MGP090
150
10
Rev. 06 - 24 January 2007
handbook, halfpage
handbook, halfpage
V
Fig.5
V
Fig.7
DS
GS
(A)
(pF)
I D
1200
C
800
400
= 10 V.
= 0; f = 1 MHz.
30
20
10
0
0
0
0
Drain current as a function of gate-source
voltage; typical values.
Input and output capacitance as functions
of drain-source voltage; typical values.
20
5
10
40
Product specification
C os
C is
V GS (V)
V DS (V)
BLF177
MGP091
MBK408
5 of 19
15
60