BLF177C,112 NXP Semiconductors, BLF177C,112 Datasheet - Page 7

• Manufacturer Part Number: BLF177C,112
• Description: TRANSISTOR RF DMOS SOT121B
• Manufacturer: NXP Semiconductors

Specifications of BLF177C,112

• Package / Case: SOT-121B
• Transistor Type: N-Channel
• Frequency: 108MHz
• Gain: 19dB
• Voltage - Rated: 125V
• Current Rating: 16A
• Voltage - Test: 50V
• Power - Output: 150W
• Minimum Operating Temperature: - 65 C
• Mounting Style: Screw
• Resistance Drain-source Rds (on): 0.3 Ohms
• Transistor Polarity: N-Channel
• Configuration: Single Dual Source
• Drain-source Breakdown Voltage: 125 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 16 A
• Power Dissipation: 220 W
• Maximum Operating Temperature: + 200 C
• Application: HF/VHF
• Channel Type: N
• Channel Mode: Enhancement
• Drain Source Voltage (max): 125V
• Output Power (max): 150W
• Power Gain (typ)@vds: 20(Min)@50V/19@50VdB
• Frequency (min): 28MHz
• Frequency (max): 108MHz
• Package Type: CRFM
• Pin Count: 4
• Forward Transconductance (typ): 6.2S
• Drain Source Resistance (max): 300@10Vmohm
• Input Capacitance (typ)@vds: 480@50VpF
• Output Capacitance (typ)@vds: 190@50VpF
• Reverse Capacitance (typ): 14@50VpF
• Operating Temp Range: -65C to 200C
• Drain Efficiency (typ): 70%
• Mounting: Screw
• Mode Of Operation: CW Class-B/SSB Class-AB
• Number Of Elements: 1
• Power Dissipation (max): 220000mW
• Vswr (max): 50
• Screening Level: Military
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Noise Figure: -
• Current - Test: -
• Lead Free Status / Rohs Status: Compliant
• Other names: 934058716112; BLF177C; BLF177C

NXP Semiconductors
handbook, halfpage
handbook, halfpage
HF/VHF power MOS transistor
Class-AB operation; V
R
Fig.9
Class-AB operation; V
R
Fig.11 Third order intermodulation distortion as a
GS
GS
(dB)
(dB)
G p
d 3
= 5 ; f
= 5 ; f
20
30
40
50
60
30
20
10
0
0
0
Power gain as a function of load power;
typical values.
function of load power; typical values.
1
1
= 28.000 MHz; f
= 28.000 MHz; f
DS
DS
= 50 V; I
= 50 V; I
2
2
= 28.001 MHz.
= 28.001 MHz.
100
100
DQ
DQ
= 0.7 A;
= 0.7 A;
P L (W) PEP
P L (W) PEP
MGP097
MGP096
200
200
Rev. 06 - 24 January 2007
handbook, halfpage
handbook, halfpage
Class-AB operation; V
R
Fig.10 Two tone efficiency as a function of load
Class-AB operation; V
R
Fig.12 Fifth order intermodulation distortion as a
GS
GS
(dB)
(%)
d 5
D
= 5 ; f
= 5 ; f
60
40
20
20
30
40
50
60
0
0
0
power; typical values.
function of load power; typical values.
1
1
= 28.000 MHz; f
= 28.000 MHz; f
DS
DS
= 50 V; I
= 50 V; I
2
2
= 28.001 MHz.
= 28.001 MHz.
100
100
DQ
DQ
= 0.7 A;
= 0.7 A;
P L (W) PEP
P L (W) PEP
Product specification
BLF177
MGP094
MGP098
7 of 19
200
200